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Strain bars in stressed layers of MOS devices

  • US 7,943,961 B2
  • Filed: 03/13/2008
  • Issued: 05/17/2011
  • Est. Priority Date: 03/13/2008
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • an active region;

    a gate strip overlying the active region;

    a metal-oxide-semiconductor (MOS) device, wherein a portion of the gate strip forms a gate of the MOS device, and wherein a portion of the active region forms a source/drain region of the MOS device;

    a stressor region over the MOS device;

    a stressor-free region inside the stressor region and outside the region over the active region;

    an ILD over the stressor region; and

    a dummy contact plug extending into the ILD and into the stressor-free region.

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