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Reverse MIM capacitor

  • US 7,944,020 B1
  • Filed: 12/22/2006
  • Issued: 05/17/2011
  • Est. Priority Date: 12/22/2006
  • Status: Expired due to Fees
First Claim
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1. An apparatus, comprising:

  • a lower metal layer disposed above a substrate layer; and

    a reverse metal-insulator-metal (MIM) capacitor coupled to, and disposed above, the lower metal layer, the reverse MIM capacitor comprising a stack of layers, the stack comprising;

    bottom electrode coupled to the lower metal layer;

    a dielectric layer disposed above the bottom electrode;

    an etch stop layer disposed above the dielectric layer; and

    an upper metal layer disposed above the etch stop layer as a top electrode,wherein the top electrode comprises a material composition different from the material composition of the etch stop layer,wherein the bottom electrode, the dielectric layer and the upper metal layer form the reverse MIM capacitor, andwherein the upper metal layer has more surface area than the lower metal layer.

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