Reverse MIM capacitor
First Claim
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1. An apparatus, comprising:
- a lower metal layer disposed above a substrate layer; and
a reverse metal-insulator-metal (MIM) capacitor coupled to, and disposed above, the lower metal layer, the reverse MIM capacitor comprising a stack of layers, the stack comprising;
bottom electrode coupled to the lower metal layer;
a dielectric layer disposed above the bottom electrode;
an etch stop layer disposed above the dielectric layer; and
an upper metal layer disposed above the etch stop layer as a top electrode,wherein the top electrode comprises a material composition different from the material composition of the etch stop layer,wherein the bottom electrode, the dielectric layer and the upper metal layer form the reverse MIM capacitor, andwherein the upper metal layer has more surface area than the lower metal layer.
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Abstract
A method and apparatus for a reverse metal-insulator-metal (MIM) capacitor. The apparatus includes a lower metal layer, a bottom electrode, and an upper metal layer. The lower metal layer is disposed above a substrate layer. The bottom electrode is disposed above the lower metal layer and coupled to the lower metal layer. The upper metal layer is disposed above the bottom electrode. The upper metal layer comprises a top electrode of a metal-insulator-metal (MIM) capacitor.
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8 Claims
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1. An apparatus, comprising:
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a lower metal layer disposed above a substrate layer; and a reverse metal-insulator-metal (MIM) capacitor coupled to, and disposed above, the lower metal layer, the reverse MIM capacitor comprising a stack of layers, the stack comprising; bottom electrode coupled to the lower metal layer; a dielectric layer disposed above the bottom electrode; an etch stop layer disposed above the dielectric layer; and an upper metal layer disposed above the etch stop layer as a top electrode, wherein the top electrode comprises a material composition different from the material composition of the etch stop layer, wherein the bottom electrode, the dielectric layer and the upper metal layer form the reverse MIM capacitor, and wherein the upper metal layer has more surface area than the lower metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification