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Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures

  • US 7,944,055 B2
  • Filed: 05/03/2010
  • Issued: 05/17/2011
  • Est. Priority Date: 09/20/2007
  • Status: Expired due to Fees
First Claim
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1. An interconnect structure comprising:

  • at least one patterned and cured low-k dielectric material located on a surface of a patterned and cured inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore, and said at least one cured and patterned low-k material and said patterned and cured inorganic antireflective coating having conductively filled regions embedded therein.

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