Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures

• US 7,944,055 B2
• Filed: 05/03/2010
• Issued: 05/17/2011
• Est. Priority Date: 09/20/2007
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Brock, Phillip J., Huang, Wu-Song S., Lin, Qinghuang, Purushothaman, Sampath, Sooriyakumaran, Ratnam, Davis, Blake W., Allen, Robert D., Nelson, Alshakim
• Primary Examiner(s): Ho; Tu-Tu V
• Application Number:
  US12/772,451
• Publication Number:
  US 20100207276A1
• Time in Patent Office: 379 Days
• Field of Search: 257/758, 257/E23.145, 257/E21.575, 438/622
• US Class Current: 257/758
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02137 the material comprising alkyl silsesquioxane, e.g. MSQ
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R¹ wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R¹ is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

Claims

1. An interconnect structure comprising:

at least one patterned and cured low-k dielectric material located on a surface of a patterned and cured inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating comprises a polymer that has at least one monomer unit comprising the formula M-R¹ wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R¹ is a chromophore, and said at least one cured and patterned low-k material and said patterned and cured inorganic antireflective coating having conductively filled regions embedded therein.

2. The interconnect structure of claim 1 wherein said inorganic antireflective coating further includes at least one second monomer unit, said at least one second monomer unit has the formula M′

-R², wherein M′

is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R² is a cross-linking agent.

3. The interconnect structure of claim 1 wherein said inorganic antireflective coating further comprises at least one additional component, including a separate crosslinker, an acid generator or a solvent.

4. The interconnect structure of claim 1 further comprising a patterned dielectric cap located between said substrate and said patterned and cured inorganic antireflective coating.

5. The interconnect structure of claim 1 wherein said at least one patterned and cured low-k dielectric material comprises a cured functionalized polymer.

6. The interconnect structure of claim 5 wherein said cured functionalized polymer comprises a polymer of a hydrocarbon, a fluorinated hydrocarbon, a siloxane, a silane, a carbosilane, an oxycarbosilane, an organosilicate or a silsesquioxane.

7. The interconnect structure of claim 1 wherein said conductively filled regions are conductively filled vias, conductively filled lines, combinations of conductively filled vias/conductively filled lines or combinations of conductively filled lines/conductively filled vias.

8. The interconnect structure of claim 1 wherein said at least one patterned and cured low-k material comprises a lower patterned and cured low-k material layer and an abutting upper patterned and cured low-k upper layer, said lower patterned and cured low-k material having conductively filled vias, and said abutting upper patterned and cured low-k material layer having conductively lines, said conductively filled lines are in contact with said conductively filled vias.

9. A film stack comprising:

an inorganic antireflective coating; and

a patternable low-k dielectric material abutting said inorganic antireflective coating, said inorganic antireflective coating comprises a polymer that has at least one monomer unit comprising the formula M-R¹ wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R¹ is a chromophore.

10. The film stack of claim 9 wherein said inorganic antireflective coating further includes at least one second monomer unit, said at least one second monomer unit has the formula M′

-R², wherein M′

is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R² is a cross-linking agent.

11. The film stack of claim 9 wherein said inorganic antireflective coating further comprises at least one additional component, including a separate crosslinker, an acid generator or a solvent.