Microelectromechanical device and method utilizing a porous surface

• US 7,944,603 B2
• Filed: 05/13/2008
• Issued: 05/17/2011
• Est. Priority Date: 04/19/2006
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Kogut, Lior, Sasagawa, Teruo
• Primary Examiner(s): Mack; Ricky L
• Assistant Examiner(s): Tra; Tuyen Q
• Application Number:
  US12/119,712
• Publication Number:
  US 20080218843A1
• Time in Patent Office: 1,099 Days
• Field of Search: 359/900, 359290-292, 359577-578, 359247-248, 359/250, 359580-582, 359584-585, 359/245, 359/295
• US Class Current: 359/291
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81B 3/001 Structures having a reduced contact area, e.g. with bumps or with a textured surface
• CPC Class Codes: B81C 2201/0115 Porous silicon
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

A microelectromechanical device (MEMS) utilizing a porous electrode surface for reducing stiction is disclosed. In one embodiment, a microelectromechanical device is an interferometric modulator that includes a transparent electrode having a first surface; and a movable reflective electrode with a second surface facing the first surface. The movable reflective electrode is movable between a relaxed and actuated (collapsed) position. An aluminum layer is provided on either the first or second surface. The aluminum layer is then anodized to provide an aluminum oxide layer which has a porous surface. The porous surface, in the actuated position, decreases contact area between the electrodes, thus reducing stiction.

Claims

1. A method of making a microelectromechanical systems device, comprising:

forming a fixed electrode;

forming a sacrificial layer over the fixed electrode;

forming a movable electrode; and

forming a porous dielectric layer after forming the fixed electrode and before forming the movable electrode such that the porous layer has a porous surface facing one of the electrodes, wherein the porous surface is substantially continuous while including a plurality of pores formed therethrough;

wherein forming the porous dielectric layer comprises forming a porous dielectric layer prior to forming the sacrificial layer and a second porous dielectric layer after forming the sacrificial layer.

2. The method of claim 1, further comprising removing the sacrificial layer.

3. The method of claim 2, wherein the porous dielectric layer is not removed at the step of removing the sacrificial layer.

4. The method of claim 1, wherein forming the porous dielectric layer comprises forming an anodized layer.

5. The method of claim 1, wherein forming the porous dielectric layer comprises anodizing aluminum into Al₂O₃.

6. The method of claim 1, wherein the porous dielectric layer has a hexagonal array structure.

7. The method of claim 6, wherein the hexagonal array structure includes vertical walls and pores defined by the vertical walls.

8. The method of claim 1, further comprising forming a dielectric layer between the fixed electrode and the movable electrode.

9. A method of making a microelectromechanical systems device, comprising:

forming a fixed electrode;

forming a sacrificial layer over the fixed electrode;

forming a movable electrode;

forming a porous layer after forming the fixed electrode and before forming the movable electrode such that the porous layer has a porous surface facing one of the electrodes, wherein the porous surface is substantially continuous while including a plurality of pores formed therethrough,

wherein the movable electrode comprises an aluminum reflective layer, and wherein the porous layer is formed directly on the reflective layer such that the porous layer faces the fixed electrode.

10. The method of claim 9, wherein forming the porous layer comprises forming the porous layer prior to forming the sacrificial layer.

11. The method of claim 9, wherein forming the porous layer comprises forming the porous layer after forming the sacrificial layer.

12. The method of claim 9, wherein forming the porous layer comprises forming a porous layer prior to forming the sacrificial layer and another porous layer after forming the sacrificial layer.

13. The method of claim 9, further comprising removing the sacrificial layer.

14. The method of claim 9, wherein forming the porous layer comprises forming an anodized layer.

15. The method of claim 9, wherein forming the porous layer comprises anodizing aluminum into Al₂O₃.

16. The method of claim 9, wherein the porous layer comprises a porous dielectric layer.

17. The method of claim 9, further comprising forming a dielectric layer between the fixed electrode and the movable electrode.