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Semiconductor device and method of manufacturing the same

  • US 7,947,596 B2
  • Filed: 09/26/2006
  • Issued: 05/24/2011
  • Est. Priority Date: 06/26/2000
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming, on a substrate in which semiconductor elements are formed, metal wiring having a region at least a portion of the peripheral surface thereof being made of a material that predominantly comprises copper; and

    forming, to cover the region of the metal wiring made of the material that predominantly comprises copper, an insulative diffusion barrier layer comprising oxygen, silicon and nitrogen as main constituent elements in which a concentration of the nitrogen is from 0.3 to 14 atom % by using an inorganic silane gas or an organic silane gas and, a nitrogen oxide gas or a gas mixture of an oxygen atom-containing gas and a nitrogen atom-containing gas by a plasma CVD method.

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