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Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof

  • US 7,947,610 B2
  • Filed: 05/26/2009
  • Issued: 05/24/2011
  • Est. Priority Date: 03/10/2000
  • Status: Expired due to Fees
First Claim
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1. A manufacturing method of a semiconductor device having a gate insulating film formed on a semiconductor substrate, the gate insulating film including first and second different regions, comprising:

  • forming a silicon oxide film series insulating film on the semiconductor substrate of said first region;

    forming metal oxide films on the silicon oxide film series insulating film of said first region and on the semiconductor substrate of said second region; and

    forming an insulating film containing metal, silicon and oxygen by reacting the silicon oxide film of said first region and silicon of the semiconductor substrate with each other by the heat treatment,wherein an oxygen concentration of the metal oxide films is set lower than a value determined by a stoichiometric ratio.

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