MOS device with varying trench depth
First Claim
Patent Images
1. A semiconductor device comprising:
- a drain region comprising an epitaxial layer;
a body disposed in the epitaxial layer;
a source embedded in the body;
a gate trench extending into the epitaxial layer;
a gate disposed in the gate trench;
an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and
an active region contact electrode disposed within the active region contact trench;
wherein;
the varying contact trench depth includes a first contact trench depth associated with a first region and a second contact trench depth associated with a second region; and
the first contact trench depth is substantially different from the second contact trench depth; and
a Schottky contact is formed in the first region and a body contact is formed in the second region.
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Abstract
A semiconductor device includes a drain, an epitaxial layer overlaying the drain, a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth, and an active region contact electrode disposed within the active region contact trench.
40 Citations
13 Claims
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1. A semiconductor device comprising:
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a drain region comprising an epitaxial layer; a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and an active region contact electrode disposed within the active region contact trench;
wherein;the varying contact trench depth includes a first contact trench depth associated with a first region and a second contact trench depth associated with a second region; and the first contact trench depth is substantially different from the second contact trench depth; and a Schottky contact is formed in the first region and a body contact is formed in the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a drain region comprising an epitaxial layer; a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and an active region contact electrode disposed within the active region contact trench;
wherein;the varying contact trench depth includes a first contact trench depth associated with a first region and a second contact trench depth associated with a second region; the first contact trench depth is substantially different from the second contact trench depth; and the semiconductor device includes a rectangular closed cell device having a width and a length, and the active region contact trench forms the first contact trench depth and the second contact trench depth along a length-wise cross section.
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11. A semiconductor device comprising:
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a drain region comprising an epitaxial layer; a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and an active region contact electrode disposed within the active region contact trench;
wherein;the varying contact trench depth includes a first contact trench depth associated with a first region and a second contact trench depth associated with a second region; the first contact trench depth is substantially different from the second contact trench depth; and the semiconductor device includes a closed cell device having a width and a length, and the active region contact trench forms the first contact trench depth and the second contact trench depth along both a length-wise cross section and a width-wise cross section.
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12. A semiconductor device comprising:
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a drain region comprising an epitaxial layer; a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and an active region contact electrode disposed within the active region contact trench;
wherein;the varying contact trench depth includes a first contact trench depth associated with a first region and a second contact trench depth associated with a second region; the first contact trench depth is substantially different from the second contact trench depth; and an area ratio of the first region and the second region is controlled to meet both an unclamped inductive switching (UIS) recovery requirement and a diode recovery requirement.
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13. A semiconductor device comprising:
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a drain region comprising an epitaxial layer; a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source, the active region contact trench having a varying contact trench depth; and an active region contact electrode disposed within the active region contact trench; wherein the semiconductor device is included in a multi-cell device that includes at least one cell that has a corresponding active region contact trench that is uniform in depth.
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Specification