Light emitting device
First Claim
1. A light emitting device comprising:
- a substrate having an insulating surface;
a semiconductor layer of a thin film transistor over the substrate;
a first electrode directly connected to the semiconductor layer;
an insulator covering an end portion of the first electrode;
a buffer layer over the first electrode;
a layer containing an organic compound over the buffer layer; and
a second electrode over the layer containing an organic compound,wherein the first electrode comprises a first layer in direct contact with the semiconductor layer and with the buffer layer, and a second layer formed over of the first layer,wherein the insulator is interposed between the second layer and the buffer layer,wherein the first layer is continuous from the semiconductor layer to the buffer layer and is interposed between the second layer and the semiconductor layer,wherein the first electrode has a first region and a second region having a different number of layers from the first region,wherein a step is formed by an end part of the second layer between the first region and the second region, andwherein the step is covered with the insulator.
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Accused Products
Abstract
A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
132 Citations
42 Claims
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1. A light emitting device comprising:
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a substrate having an insulating surface; a semiconductor layer of a thin film transistor over the substrate; a first electrode directly connected to the semiconductor layer; an insulator covering an end portion of the first electrode; a buffer layer over the first electrode; a layer containing an organic compound over the buffer layer; and a second electrode over the layer containing an organic compound, wherein the first electrode comprises a first layer in direct contact with the semiconductor layer and with the buffer layer, and a second layer formed over of the first layer, wherein the insulator is interposed between the second layer and the buffer layer, wherein the first layer is continuous from the semiconductor layer to the buffer layer and is interposed between the second layer and the semiconductor layer, wherein the first electrode has a first region and a second region having a different number of layers from the first region, wherein a step is formed by an end part of the second layer between the first region and the second region, and wherein the step is covered with the insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 39)
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12. A light emitting device comprising:
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a substrate having an insulating surface; a semiconductor layer of a thin film transistor over the substrate; a first electrode electrically connected to the semiconductor layer; an insulator covering an end portion of the first electrode; a buffer layer over the first electrode; a layer containing an organic compound over the buffer layer; and a second electrode over the layer containing an organic compound, wherein the first electrode comprises a first layer in direct contact with the semiconductor layer and with the buffer layer, and a second layer formed over of the first layer, wherein the insulator is interposed between the second layer and the buffer layer, wherein the first layer is continuous from the semiconductor layer to the buffer layer and is interposed between the second layer and the semiconductor layer, wherein the first electrode has a first region and a second region having a different number of layers from the first region, wherein a step is formed by an end part of the second layer between the first region and the second region, and wherein the step is covered with the insulator. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 40)
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24. A light emitting device comprising:
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a substrate having an insulating surface; a semiconductor layer of a thin film transistor over the substrate; a first electrode directly connected to the semiconductor layer; an insulator covering an end portion of the first electrode; a buffer layer over the first electrode; a layer containing an organic compound over the buffer layer; and a second electrode which transmits light over the layer containing an organic compound, wherein the first electrode comprises a first layer in direct contact with the semiconductor layer and with the buffer layer, and a second layer formed over of the first layer, wherein the insulator is interposed between the second layer and the buffer layer, wherein the first layer is continuous from the semiconductor layer to the buffer layer and is interposed between the second layer and the semiconductor layer, wherein the first electrode has a first region and a second region having more layers than the first region, wherein a step is formed by an end part of the second layer between the first region and the second region, and wherein the step is covered with the insulator. - View Dependent Claims (25, 26, 27, 28, 29, 30, 41)
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31. A light emitting device comprising:
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a substrate having an insulating surface; a semiconductor layer of a thin film transistor over the substrate; a first electrode electrically connected to the semiconductor layer; an insulator covering an end portion of the first electrode; a buffer layer over the first electrode; a layer containing an organic compound over the buffer layer; and a second electrode which transmits light over the layer containing an organic compound, wherein the first electrode comprises a first layer in direct contact with the semiconductor layer and with the buffer layer, and a second layer formed over of the first layer, wherein the insulator is interposed between the second layer and the buffer layer, wherein the first layer is continuous from the semiconductor layer to the buffer layer and is interposed between the second layer and the semiconductor layer, wherein the first electrode has a first region and a second region having more layers than the first region, wherein a step is formed by an end part of the second layer between the first region and the second region, and wherein the step is covered with the insulator. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 42)
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Specification