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Semiconductor light emitting element and method for manufacturing semiconductor light emitting device

  • US 7,951,625 B2
  • Filed: 02/19/2008
  • Issued: 05/31/2011
  • Est. Priority Date: 02/21/2007
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a semiconductor light emitting element, comprising the steps of:

  • forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;

    partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;

    bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;

    grinding the substrate;

    bonding a support substrate to the ground substrate surface;

    detaching the grinding board from the substrate to which the support substrate is bonded;

    forming a notch in the n-type layer;

    performing a singulation operation; and

    detaching the support substrate.

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