Semiconductor light emitting element and method for manufacturing semiconductor light emitting device

• US 7,951,625 B2
• Filed: 02/19/2008
• Issued: 05/31/2011
• Est. Priority Date: 02/21/2007
• Status: Expired due to Fees

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Kamei, Hidenori
• Primary Examiner(s): Smith; Matthew
• Assistant Examiner(s): ENAD, CHRISTINE A
• Application Number:
  US12/518,388
• Publication Number:
  US 20100047939A1
• Time in Patent Office: 1,197 Days
• Field of Search: 438/27, 438/33, 257/E33.056
• US Class Current: 438/27
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield.

A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.

Claims

1. A method for fabricating a semiconductor light emitting element, comprising the steps of:

forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;

partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;

bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;

grinding the substrate;

bonding a support substrate to the ground substrate surface;

detaching the grinding board from the substrate to which the support substrate is bonded;

forming a notch in the n-type layer;

performing a singulation operation; and

detaching the support substrate.

2. A method for fabricating a semiconductor light emitting device, comprising the steps of:

forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;

partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;

bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;

grinding the substrate;

bonding a support substrate to the ground substrate surface;

detaching the grinding board from the substrate to which the support substrate is bonded;

forming a notch in the n-type layer;

performing a singulation operation;

connecting the n-side electrode and the p-side electrode to a submount provided with a lead-out electrode; and

detaching the support substrate.

3. The method of claim 2 comprising, after the step of detaching the support substrate, a step of forming a phosphor-containing sealing layer.

4. A method for fabricating a semiconductor light emitting element, comprising the steps of:

forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;

partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;

bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;

grinding the substrate;

giving a total reflection prevention treatment to the ground substrate surface;

bonding a support substrate to the substrate surface to which the total reflection prevention treatment is given;

detaching the grinding board from the substrate to which the support substrate is bonded;

forming a notch in the n-type layer;

performing a singulation operation; and

detaching the support substrate.

5. A method of fabricating a semiconductor light emitting device, comprising the steps of:

forming on a substrate a light emitting layer including an n-type layer, an active layer and a p-type layer;

partially removing the active layer and the p-type layer and forming an n-side electrode and a p-side electrode on the n-type layer and the p-type layer, respectively;

bonding a side of the substrate on which the light emitting layer is formed to a grinding board via a filling material;

grinding the substrate;

giving a total reflection prevention treatment to the ground substrate surface;

bonding a support substrate to the substrate surface to which the total reflection prevention treatment is given;

detaching the grinding board from the substrate to which the support substrate is bonded;

forming a notch in the n-type layer;

performing a singulation operation;

connecting the n-side electrode and the p-side electrode to a submount provided with a lead-out electrode; and

detaching the support substrate.

6. The method of claim 5 comprising, after the step of detaching the support substrate, a step of forming a phosphor-containing sealing layer.