Method and device for protecting interferometric modulators from electrostatic discharge
First Claim
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1. A method of making an interferometric modulator device, the method comprising:
- depositing a first electrode layer over a substrate;
depositing a sacrificial layer over the first electrode layer;
depositing a second electrode layer over the sacrificial layer;
depositing a plurality of doped semiconductor layers over the substrate; and
forming a ground plane over the substrate, the ground plane and the plurality of doped semiconductor layers being configured to shunt to ground an excess current carried by at least one of the first electrode layer and the second electrode layer.
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Abstract
A MEMS device such as an interferometric modulator includes an integrated ESD protection element capable of shunting to ground an excess current carried by an electrical conductor in the MEMS device. The protection element may be a diode and may be formed by depositing a plurality of doped semiconductor layers over the substrate on which the MEMS device is formed.
100 Citations
14 Claims
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1. A method of making an interferometric modulator device, the method comprising:
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depositing a first electrode layer over a substrate; depositing a sacrificial layer over the first electrode layer; depositing a second electrode layer over the sacrificial layer; depositing a plurality of doped semiconductor layers over the substrate; and forming a ground plane over the substrate, the ground plane and the plurality of doped semiconductor layers being configured to shunt to ground an excess current carried by at least one of the first electrode layer and the second electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification