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Light-emitting crystal structures

  • US 7,952,109 B2
  • Filed: 07/10/2006
  • Issued: 05/31/2011
  • Est. Priority Date: 07/10/2006
  • Status: Expired due to Fees
First Claim
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1. An apparatus, comprising:

  • a structure comprising an n-type group III-nitride layer and a p-type group III-nitride layer and a junction between the n-type and the p-type group III-nitride layers therein, the structure having a plurality of pyramids of group III-nitride; and

    wherein a quantum well is located at the junction, andwherein a continuous surface of one of the n-type group III-nitride layer and the p-type group III-nitride layer forms outer surfaces of at least two of the pyramids.

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