Image sensor and sensor unit

• US 7,952,121 B2
• Filed: 08/25/2008
• Issued: 05/31/2011
• Est. Priority Date: 08/28/2007
• Status: Expired due to Fees

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Nakashima, Hayato, Shimizu, Ryu, Arimoto, Mamoru, Misawa, Kaori
• Primary Examiner(s): Nguyen; Thinh T
• Application Number:
  US12/197,515
• Publication Number:
  US 20090057724A1
• Time in Patent Office: 1,009 Days
• Field of Search: 257/252, 257/236, 257/246, 257/E31.001, 257/223, 257/225, 257/229, 257/230
• US Class Current: 257/252
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 29/76825 Structures for regeneration, refreshing, leakage compensation or the like

Abstract

An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

Claims

1. An image sensor comprising:

a charge storage portion for storing and transferring signal charges;

a first electrode for forming an electric field storing the signal charges in said charge storage portion;

a charge increasing portion for increasing the signal charges stored in said charge storage portion; and

a second electrode for forming another electric field increasing the signal charges in said charge increasing portion, wherein

the quantity of the signal charges storable in said charge storage portion has at least either of a structure that the plane area of said first electrode is larger than at least the plane area of said second electrode or a structure that the dielectric constant of a gate insulating film between said first electrode and said charge storage portion is at least larger than the dielectric constant of said gate insulating film between said second electrode and said charge increasing portion so that the quantity of the signal charges storable in said charge storage portion is not less than the quantity of the signal charges storable in said charge increasing portion, and wherein

the signal charges are increased in said charge increasing portion due to impact ionization by the electric field formed from said second electrode.

2. The image sensor according to claim 1, wherein

the plane area of said first electrode is larger than at least the plane area of said second electrode.

3. The image sensor according to claim 2, wherein

a first voltage for forming the electric field storing the signal charges is applied to said first electrode and a second voltage for forming the electric field increasing the signal charges, larger than said first voltage is applied to said second electrode, and

the plane area of said first electrode and the plane area of said second electrode are so set on the basis of the levels of said first voltage and said second voltage that the quantity of the signal charges storable in said charge storage portion is not less than the quantity of the signal charges storable in said charge increasing portion.

4. The image sensor according to claim 1, wherein

the length of said first electrode along a transfer direction of the signal charges is larger than at least the length of said second electrode along the transfer direction of the signal charges.

5. The image sensor according to claim 4, wherein

the length of said first electrode extending in a direction perpendicular to the transfer direction of the signal charges is substantially identical to at least the length of said second electrode extending in a direction perpendicular to the transfer direction of the signal charges in plan view.

6. The image sensor according to claim 1, wherein

the length of said first electrode extending in a direction perpendicular to a transfer direction of the signal charges is larger than at least the length of said second electrode extending in a direction perpendicular to the transfer direction of the signal charges in plan view.

7. The image sensor according to claim 1, further comprising:

a voltage conversion portion for converting the signal charges to a voltage;

a third electrode for forming an electric field transferring the signal charges stored in said charge storage portion to said voltage conversion portion, provided between said first electrode and said voltage conversion portion; and

a transfer channel provided below said first electrode, said second electrode and said third electrode, including said charge increasing portion and said charge storage portion and performing a signal charge transferring operation and a signal charge increasing operation, wherein

the potential of said transfer channel corresponding to said third electrode in applying a voltage forming the electric field transferring the signal charges to said voltage conversion portion to said third electrode is larger than the potential of said charge storage portion included in said transfer channel corresponding to said first electrode in applying a voltage for forming the electric field storing the signal charges to said first electrode.

8. The image sensor according to claim 7, wherein

said signal charge transferring operation from said charge storage portion to said voltage conversion portion is so controlled to be performed by applying the voltage for forming the electric field transferring the signal charges to said voltage conversion portion to said third electrode in a state of applying the voltage for forming the electric field storing the signal charges in said charge storage portion to said first electrode.

9. The image sensor according to claim 7, wherein

the impurity concentration of a region of said transfer channel corresponding to said first electrode is smaller than at least the impurity concentration of a region corresponding to said third electrode.

10. The image sensor according to claim 1, further comprising a fourth electrode provided between said first electrode and said second electrode and forming an electric field for transferring the signal charges, wherein

a signal charge increasing operation is performed by transferring the signal charges from said charge storage portion to said charge increasing portion in a state of applying a voltage forming the electric field transferring the signal charges to said fourth electrode.

11. The image sensor according to claim 10, wherein

said signal charge increasing operation is performed by applying a voltage for forming the electric field increasing the signal charges in said charge increasing portion to said second electrode and thereafter applying the voltage for forming the electric field transferring the signal charges to said fourth electrode in a state of applying a voltage for forming the electric field storing the signal charges in said charge storage portion to said first electrode.

12. The image sensor according to claim 1, wherein

a signal charge increasing operation by transferring the signal charges from said charge storage portion to said charge increasing portion and a signal charge transferring operation from said charge increasing portion to said charge storage portion are alternately repeatedly performed.

13. The image sensor according to claim 1, further comprising:

a voltage conversion portion for converting the signal charges to a voltage;

a photoelectric conversion portion generating the signal charges;

a third electrode for forming an electric field transferring the signal charges stored in said charge storage portion to said voltage conversion portion, provided between said first electrode and said voltage conversion portion,

a fourth electrode provided between said first electrode and said second electrode, and forming an electric field for transferring the signal charges; and

a fifth electrode for transferring the signal charges, provided between said photoelectric conversion portion and said second electrode.

14. The image sensor according to claim 13, wherein

the plane areas of said second electrode, said third electrode, said fourth electrode and said fifth electrode are substantially identical to each other, and the plane area of said first electrode is larger than each of the plane areas of said second electrode, said third electrode, said fourth electrode and said fifth electrode.