Shield contacts in a shielded gate MOSFET
First Claim
1. A semiconductor structure comprising:
- an active region comprising trenches extending into a semiconductor region, each trench including a shield electrode in a bottom portion of the trench, a gate electrode in an upper portion of the trench over the shield electrode, and an inter-electrode dielectric layer extending between the shield electrode and the gate electrode;
a shield contact region surrounded by the active region, the shield contact region comprising at least one contact trench extending into the semiconductor region, wherein the shield electrode from at least one of the trenches in the active region extends along a length of the contact trench; and
an interconnect layer extending over the active region and the shield contact region, wherein in the active region the interconnect layer is isolated from the gate electrode in each of the trenches by a dielectric layer and the interconnect layer contacts mesa surfaces of the semiconductor region adjacent to the trenches, and in the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench.
7 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor structure comprises an active region comprising trenches extending into a semiconductor region. Each trench includes a shield electrode and a gate electrode. The semiconductor structure also comprises a shield contact region adjacent to the active region. The shield contact region comprises at least one contact trench extending into the semiconductor region. The shield electrode from at least one of the trenches in the active region extends along a length of the contact trench. The semiconductor structure also comprises an interconnect layer extending over the active region and the shield contact region. In the active region the interconnect layer is isolated from the gate electrode in each trench by a dielectric layer and contacts mesa surfaces of the semiconductor region adjacent to the trenches. In the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench.
23 Citations
16 Claims
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1. A semiconductor structure comprising:
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an active region comprising trenches extending into a semiconductor region, each trench including a shield electrode in a bottom portion of the trench, a gate electrode in an upper portion of the trench over the shield electrode, and an inter-electrode dielectric layer extending between the shield electrode and the gate electrode; a shield contact region surrounded by the active region, the shield contact region comprising at least one contact trench extending into the semiconductor region, wherein the shield electrode from at least one of the trenches in the active region extends along a length of the contact trench; and an interconnect layer extending over the active region and the shield contact region, wherein in the active region the interconnect layer is isolated from the gate electrode in each of the trenches by a dielectric layer and the interconnect layer contacts mesa surfaces of the semiconductor region adjacent to the trenches, and in the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor structure comprising:
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first and second active regions each comprising trenches extending into a semiconductor region, wherein each trench includes a shield electrode in a bottom portion of the trench, a gate electrode in an upper portion of the trench over the shield electrode, and an inter-electrode dielectric layer extending between the shield electrode and the gate electrode; a shield contact region between the first and second active regions, the shield contact region comprising at least one contact trench extending into the semiconductor region, wherein the shield electrode from at least one of the trenches in the first active region extends along a length of the contact trench; and an interconnect layer extending over the first and second active regions and the contact region, wherein in the first and second active regions the interconnect layer is isolated from the gate electrode in each of the trenches by a dielectric layer and the interconnect layer contacts mesa surfaces of the semiconductor region adjacent to the trenches, and in the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification