Micromagnetic device and method of forming the same

• US 7,952,459 B2
• Filed: 09/10/2007
• Issued: 05/31/2011
• Est. Priority Date: 09/10/2007
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Enpirion, Inc. (MediaTek, Inc.)
• Inventors: Lotfi, Ashraf W., Filas, Robert W., Liakopoulos, Trifon M.
• Primary Examiner(s): NGUYEN, TUYEN T
• Application Number:
  US11/852,697
• Publication Number:
  US 20090066467A1
• Time in Patent Office: 1,359 Days
• Field of Search: 336/65, 336/83, 336/200, 336206-208, 336233-234
• US Class Current: 336/200
• CPC Class Codes: H01F 10/132 containing cobalt
• CPC Class Codes: H01F 10/138 containing nanocrystallites, e.g. obtained by annealing
• CPC Class Codes: H01F 10/265 Magnetic multilayers non exchange-coupled H01F10/32 takes precedence
• CPC Class Codes: H01F 17/0033 with the coil helically wound around a magnetic core
• CPC Class Codes: H01F 41/046 structurally combined with ferromagnetic material

Abstract

A micromagnetic device including a substrate, and a magnetic core layer formed over the substrate from a magnetic alloy. The magnetic alloy includes iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy.

Claims

1. A micromagnetic device, comprising:

a substrate;

an adhesive layer over said substrate; and

a magnetic core layer over said adhesive layer from a magnetic alloy including iron, cobalt and phosphorous, wherein a content of said cobalt is in a range of 1.8 to 4.5 atomic percent, a content of said phosphorus is in a range of 20.1 to 30 atomic percent, and a content of said iron is substantially a remaining proportion of said magnetic alloy.

2. The micromagnetic device as recited in claim 1 wherein said magnetic alloy further includes one of the group consisting of sulfur, vanadium, tungsten, copper, and combinations thereof, with a concentration in a range of 1 to 100 parts per million.

3. The micromagnetic device as recited in claim 1 wherein said magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

4. The micromagnetic device as recited in claim 1 further comprising an insulating layer between said substrate and said adhesive layer.

5. The micromagnetic device as recited in claim 1 further comprising a conductive winding layer and an insulating layer between said substrate and said adhesive layer.

6. The micromagnetic device as recited in claim 1 further comprising another magnetic core layer over said magnetic core layer.

7. The micromagnetic device as recited in claim 1 further comprising a seed layer between said adhesive layer and said magnetic core layer.

8. The micromagnetic device as recited in claim 1 further comprising a protective layer over said magnetic core layer.

9. The micromagnetic device as recited in claim 1 further comprising an insulating layer over said magnetic core layer.

10. The micromagnetic device as recited in claim 1 further comprising an insulating layer and a conductive winding layer over said magnetic core layer.

11. A micromagnetic device, comprising:

a substrate;

a magnetic core layer over said substrate from a magnetic alloy;

an insulating layer over said magnetic core layer;

another magnetic core layer over said insulating layer from a magnetic alloy, wherein at least one of said magnetic alloys include iron, cobalt and phosphorous and a content of said cobalt is in a range of 1.8 to 4.5 atomic percent, a content of said phosphorus is in a range of 20.1 to 30 atomic percent, and a content of said iron is substantially a remaining proportion of said at least one of said magnetic alloys; and

another insulating layer over said another magnetic core layer.

12. The micromagnetic device as recited in claim 11 wherein said at least one of said magnetic alloys further include one of the group consisting of sulfur, vanadium, tungsten, copper, and combinations thereof, with a concentration in a range of 1 to 100 parts per million.

13. The micromagnetic device as recited in claim 11 wherein at least one said magnetic alloys is an amorphous or nanocrystalline magnetic alloy.

14. The micromagnetic device as recited in claim 11 further comprising a conductive winding layer and another insulating layer between said substrate and said magnetic core layer.

15. The micromagnetic device as recited in claim 11 further comprising an adhesive layer and a seed layer between said substrate and said magnetic core layer.

16. The micromagnetic device as recited in claim 11 further comprising a protective layer between said magnetic core layer and said insulating layer.

17. The micromagnetic device as recited in claim 11 further comprising an adhesive layer and a seed layer between said insulating layer and said another magnetic core layer.

18. The micromagnetic device as recited in claim 11 further comprising a protective layer between said another magnetic core layer and said another insulating layer.

19. The micromagnetic device as recited in claim 11 further comprising an interconnect over said another insulating layer.

20. The micromagnetic device as recited in claim 11 further comprising a conductive winding layer over said another insulating layer.