Etching of nano-imprint templates using an etch reactor

• US 7,955,516 B2
• Filed: 08/09/2007
• Issued: 06/07/2011
• Est. Priority Date: 11/02/2006
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kumar, Ajay, Chandrachood, Madhavi R.
• Primary Examiner(s): DEO, DUY VU NGUYEN
• Application Number:
  US11/836,258
• Publication Number:
  US 20080105649A1
• Time in Patent Office: 1,398 Days
• Field of Search: None
• US Class Current: 216/67
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G03F 1/80 Etching
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Abstract

Methods for etching a metal layer using an imprinted resist material are provided. In one embodiment, a method for processing a photolithographic reticle includes providing a reticle having a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer, etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer in a first etching step, and etching the exposed portions of the metal photomask layer through the imprinted resist material in a second etching step, wherein at least one of the first or second etching steps utilizes a plasma formed from a processing gas comprising oxygen, halogen and chlorine containing gases. In one embodiment, the process gas is utilized in both the first and second etching steps. In another embodiment, the first and second etching steps are performed in the same processing chamber.

Claims

1. A method for processing a photolithographic reticle, comprising:

positioning a mold on a layer of resist material disposed on a reticle having a metal photomask layer formed on an optically transparent substrate;

curing the resist material on the reticle;

removing the mold to leave an imprint on the cured resist material;

positioning the imprinted reticle on a support member in a processing chamber;

etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer using a plasma formed in the processing chamber; and

etching the exposed portions of the metal photomask layer through the imprinted resist material the using the plasma, wherein etching recessed regions of the imprinted resist material further comprises;

providing a first gas mixture from which the plasma is formed to the processing chamber, the first gas mixture comprising an oxygen containing gas, a halogen containing gas and a chlorine containing gas.

2. The method of claim 1, wherein etching recessed regions of the imprinted resist material further comprises:

providing an inert gas in the first gas mixture, the inert gas comprising about 5 to about 40 percent volume of the total gas mixture.

3. The method of claim 1, wherein etching the exposed portions of the metal photomask layer further comprises:

providing a second gas mixture from which a plasma is formed in the processing chamber, the second gas mixture comprising an oxygen containing gas, a halogen containing gas and a chlorine containing gas.

4. The method of claim 3, wherein etching recessed regions of the imprinted resist material and etching the exposed portions of the metal photomask layer are performed in-situ in the processing chamber.

5. A method for processing a photolithographic reticle, comprising:

positioning a mold on a first layer of resist material disposed on a reticle having a metal photomask layer formed on an optically transparent substrate;

curing the resist material on the reticle;

removing the mold to leave an imprint on the cured resist material;

positioning the imprinted reticle on a support member in a processing chamber;

etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer using a plasma formed in the processing chamber;

etching the exposed portions of the metal photomask layer through the imprinted resist material the using the plasma;

depositing a second layer of resist material on the etched metal photomask layer;

patterning the second layer of resist material to expose an attenuating material; and

plasma etching the exposed portions of the attenuating material through the patterned second of resist material to form a phase-shifting photomask.

6. The method of claim 5, wherein patterning the second layer of resist material further comprises:

imprinting the second layer of resist material;

etching recessed regions of the imprinted second layer of resist material to expose portions of the attenuating material.

7. A method for processing a photolithographic reticle, comprising:

positioning a reticle on a support member in a processing chamber, wherein the reticle comprises a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer;

introducing a processing gas comprising an oxygen containing gas, a chlorine containing gas, and a halogen containing gas into the processing chamber;

etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer using a plasma formed from the processing gas; and

etching the exposed portions of the metal photomask layer through the imprinted resist material the using the plasma.

8. The method of claim 7, wherein etching recessed regions of the imprinted resist material further comprises:

forming the plasma from an oxygen containing gas, a halogen containing gas and a chlorine containing gas.

9. The method of claim 8, wherein the etching recessed regions of the imprinted resist material further comprises:

providing an inert gas with the oxygen containing gas, the halogen containing gas and the chlorine containing gas, the inert gas comprising about 5 to about 40 percent volume of a total gas volume used to form the plasma.

10. The method of claim 8, wherein the plasma substantially does not include an inert gas.

11. The method of claim 8, wherein etching the exposed portions of the metal photomask layer further comprises:

forming a plasma formed from an oxygen containing gas, a halogen containing gas and a chlorine containing gas.

12. The method of claim 7, wherein etching recessed regions of the imprinted resist material and etching the exposed portions of the metal photomask layer are performed in-situ in the processing chamber.

13. The method of claim 7 further comprising:

depositing a second layer of resist material on the etched metal photomask layer;

patterning the second layer of resist material to expose an attenuating material; and

plasma etching the exposed portions of the attenuating material through the patterned second of resist material to form a phase-shifting photomask.

14. The method of claim 13, wherein patterning the second layer of resist material further comprises:

imprinting the second layer of resist material.

15. A method for processing a photolithographic reticle, comprising:

providing a reticle having a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer;

etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer in a first etching step; and

etching the exposed portions of the metal photomask layer through the imprinted resist material in a second etching step, wherein both of the first and second etching steps utilize a plasma formed from a processing gas comprising an oxygen containing gas, a chlorine containing gas, and a halogen containing gas.

16. The method of claim 15, wherein the process gas utilized in both the first and second etching steps have different ratios of oxygen containing gas, chlorine containing gas, and halogen containing gas.

17. The method of claim 15, wherein the first and second etching steps are performed in the same processing chamber.