Elimination of flow and pressure gradients in low utilization processes

• US 7,955,646 B2
• Filed: 08/09/2004
• Issued: 06/07/2011
• Est. Priority Date: 08/09/2004
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Cruse, James P., Hegedus, Andreas G., Kuppurao, Satheesh
• Primary Examiner(s): Barr; Michael
• Assistant Examiner(s): BOWMAN, ANDREW J
• Application Number:
  US10/914,964
• Publication Number:
  US 20060029747A1
• Time in Patent Office: 2,493 Days
• Field of Search: 438/656, 438/706, 438/710, 432/58, 427/248.1
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: C23C 8/10 Oxidising
• CPC Class Codes: C23C 8/36 using ionised gases, e.g. ionitriding
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/28211 in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer H01L21/28194 and H01L21/28202 take precedence
• CPC Class Codes: H01L 21/28525 the conductive layers comprising semiconducting material H01L21/28518, H01L21/28537 take precedence
• CPC Class Codes: H01L 21/3115 Doping the insulating layers
• CPC Class Codes: H01L 21/3144 on silicon

Abstract

The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.

Claims

1. A method, comprising:

flowing a gas into a chamber;

stopping the gas flowing into the chamber; and

performing a low species utilization process within the chamber after minimizing pressure and flow gradients within the chamber, the low species utilization process comprising;

striking a plasma at a first voltage;

applying a floating voltage to a substrate holder; and

diffusing an amount of atoms into a substrate in an approximate range of 1×

e¹⁴ atoms/cm² and 1×

e¹⁶ atoms/cm² while striking the plasma, wherein no gas flows into the chamber while performing the low species utilization process and a difference in voltage of the first voltage and the floating voltage drives the diffusing of the atoms into the substrate.

2. The method of claim 1, wherein stopping the gas flowing into the chamber comprises stabilizing the pressure within the chamber, closing a gate valve of the chamber, and maintaining the pressure within the chamber while stopping the gas flowing into the chamber.

3. The method of claim 1, wherein performing the low species utilization process comprises a decoupled plasma nitridation.

4. A method, comprising:

flowing a gas into a plasma chamber;

stopping the gas flowing into the plasma chamber;

striking a plasma including the gas at a first voltage above a substrate after stopping the gas flowing into the plasma chamber;

applying a floating voltage to a substrate holder; and

diffusing nitrogen into the substrate while striking the plasma;

wherein no gas flows into the chamber and no gas is pumped out of the plasma chamber while striking the plasma, and a difference in voltage of the first voltage and floating voltage drives the diffusing of the nitrogen into the substrate.

5. The method of claim 4, further comprising stabilizing the pressure within the plasma chamber before striking the plasma.

6. The method of claim 4, further comprising maintaining a stable pressure within the plasma chamber while striking the plasma.

7. The method of claim 4, wherein diffusing comprises implanting nitrogen into the substrate in an approximate range of 1×

e¹⁴ atoms/cm² and 1×

e¹⁶ atoms/cm².

8. The method of claim 4, wherein the nitrogen diffuses into a silicon dioxide gate.

9. A method, comprising:

flowing a nitrogen gas into a decoupled plasma nitridation chamber, the decoupled plasma nitridation chamber having an internal pressure;

closing the gate valve of the decoupled plasma nitridation chamber;

stabilizing the internal pressure of the decoupled plasma nitridation chamber to obtain a stabile pressure;

maintaining the stable pressure within the decoupled plasma nitridation chamber while stopping the gas flowing into the decoupled plasma nitridation chamber; and

striking a plasma at a first voltage above a substrate after stopping the nitrogen gas flowing into the chamber and after stabilizing the internal pressure of the chamber;

applying a floating voltage to a substrate holder; and

diffusing nitrogen into the substrate while striking the plasma;

wherein no gas flows into the decoupled plasma nitridation chamber and no gas is pumped out of the decoupled plasma nitridation chamber while striking the plasma, and a difference in voltage of the first voltage and the floating voltage drives the diffusing of the nitrogen into the substrate.

10. The method of claim 9, wherein diffusing comprises implanting the nitrogen in an approximate range of 1×

10¹⁴ atoms/cm² and 8×

10¹⁴ atoms/cm² into a silicon dioxide film on a 300 mm wafer.

11. The method of claim 9, wherein striking a plasma comprises providing a coil about a roof of the plasma nitridation chamber and energizing the coil with radio frequency (RF) power.

12. The method of claim 9, wherein stabilizing the internal pressure of the decoupled plasma nitridation chamber comprises bringing the internal pressure to within approximately 5 mTorr and 95 mTorr.

13. The method of claim 9, wherein stabilizing the internal pressure of the decoupled plasma nitridation chamber comprises bringing the internal pressure to approximately 20 mTorr.

14. The method of claim 9, further comprising maintaining the stabilized internal pressure while striking a plasma.

15. The method of claim 9, wherein maintaining the stable pressure within the decoupled plasma nitridation chamber comprises ramping down the nitrogen gas flow at a rate in the approximate range of 10 sccm/second and 50 sccm/second.

16. The method of claim 9, wherein striking the plasma comprises applying an effective radio frequency in the approximate range of 30 W to 300 W.

17. The method of claim 9, wherein striking the plasma comprises applying an effective radio frequency of approximately 150 W.