Method for forming dielectric film using porogen gas
First Claim
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1. A method for obtaining process parameters for controlling a dielectric constant of a cured film, comprising:
- (i) introducing only a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is placed, said source gas consisting of a silicon-containing hydrocarbon compound having multiple cross linkable groups including one or more alkoxyl groups, said porogen gas being a gas constituted by a porogen material, C being no less than 10 seem but less than 50 sccm, wherein a ratio of B/(A+B) is used as a parameter for controlling a dielectric constant of a cured film, and is between 0.70 and 0.85;
(ii) applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD;
(iii) curing the film to remove the porogen material, thereby forming pores in the cured film having a dielectric constant k1;
(iv) repeating steps (i) to (iii) by changing the ratio of B/(A+B) between 0.70 and 0.85 by an amount R, thereby obtaining a cured film having a dielectric constant k2; and
(v) repeating steps (i) to (iii) by changing the ratio of B/(A+B) between 0.70 and 0.85 at a rate of R/(k1−
k2) to obtain a cured film having a target dielectric constant, thereby obtaining process parameters for the target dielectric constant.
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Abstract
A method for reducing a dielectric constant of a cured film, includes: introducing a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is place; increasing a ratio of B/(A+B) used as a parameter for controlling a dielectric constant of a cured film, by a degree substantially or nearly in proportion to a target decrease of dielectric constant of a cured film; applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; and curing the film to remove the porogen material, thereby forming pores in the cured film.
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Citations
17 Claims
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1. A method for obtaining process parameters for controlling a dielectric constant of a cured film, comprising:
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(i) introducing only a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is placed, said source gas consisting of a silicon-containing hydrocarbon compound having multiple cross linkable groups including one or more alkoxyl groups, said porogen gas being a gas constituted by a porogen material, C being no less than 10 seem but less than 50 sccm, wherein a ratio of B/(A+B) is used as a parameter for controlling a dielectric constant of a cured film, and is between 0.70 and 0.85; (ii) applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; (iii) curing the film to remove the porogen material, thereby forming pores in the cured film having a dielectric constant k1; (iv) repeating steps (i) to (iii) by changing the ratio of B/(A+B) between 0.70 and 0.85 by an amount R, thereby obtaining a cured film having a dielectric constant k2; and (v) repeating steps (i) to (iii) by changing the ratio of B/(A+B) between 0.70 and 0.85 at a rate of R/(k1−
k2) to obtain a cured film having a target dielectric constant, thereby obtaining process parameters for the target dielectric constant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for obtaining process parameters for controlling a dielectric constant of a cured film, comprising:
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(i) introducing only a source gas at a flow rate of A, a porogen gas at a flow rate of B, an oxidizing gas at a flow rate of C, and an inert gas into a reaction space in which a substrate is placed, said source gas consisting of a silicon-containing hydrocarbon compound having multiple cross linkable groups including one or more alkoxyl groups, said porogen gas being a gas constituted by a porogen material, C being no less than 10 sccm but less than 50 sccm, wherein a ratio of B/(A+B) is used as a parameter for controlling a dielectric constant of a cured film and is between 0.30 and 0.70; (ii) applying RF power to the reaction space, thereby depositing a film on the substrate by plasma CVD; (iii) curing the film to remove the porogen material, thereby forming pores in the cured film having a dielectric constant k1; (iv) repeating steps (i) to (iii) by changing the ratio of B/(A+B) between 0.30 and 0.70 by an amount R, thereby obtaining a cured film having a dielectric constant k2; and (v) repeating steps (i) to (iii) by changing the ratio of B/(A+B) between 0.30 and 0.70 at a rate of R/(k1−
k2) to obtain a cured film having a target dielectric constant, thereby obtaining process parameters for the target dielectric constant. - View Dependent Claims (16, 17)
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Specification
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Current AssigneeASM Japan K.K. (ASM International NV)
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Original AssigneeASM Japan K.K. (ASM International NV)
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InventorsTsuji, Naoto
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Primary Examiner(s)TUROCY, DAVID P
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Application NumberUS11/759,439Publication NumberTime in Patent Office1,461 DaysField of Search427/248.1, 427/372.2, 427/255.26, 427/255.27US Class Current427/255.29CPC Class CodesC23C 16/401 containing siliconC23C 16/56 After-treatmentH01L 21/02126 the material containing Si,...H01L 21/02203 the layer being porousH01L 21/02216 the compound being a molecu...H01L 21/02274 in the presence of a plasma...H01L 21/02348 treatment by exposure to UV...H01L 21/31695 Deposition of porous oxides...
