Methods for forming an amorphous silicon film in display devices
First Claim
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1. A method of depositing an amorphous layer, comprising:
- providing a substrate into a deposition chamber;
supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber;
maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber; and
forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.
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Abstract
Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.
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Citations
19 Claims
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1. A method of depositing an amorphous layer, comprising:
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providing a substrate into a deposition chamber; supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber; maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber; and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An amorphous-based photodiode sensor, comprising:
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a metal electrode layer disposed on a substrate; an n-type amorphous silicon layer disposed on the metal electrode layer; an intrinsic type amorphous silicon layer disposed on the n-type amorphous silicon layer, wherein the intrinsic type amorphous silicon layer is deposited from a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4; and a p-type amorphous silicon layer disposed on the intrinsic type amorphous silicon layer, wherein the n-type, intrinsic type and p-type amorphous silicon layers form a photodiode sensor on the substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of forming an amorphous-based photodiode sensor, comprising:
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forming a n-type amorphous silicon layer on a substrate; forming an intrinsic type amorphous silicon layer on the substrate; and forming a p-type amorphous silicon layer on the substrate, wherein the n-type amorphous silicon layer, intrinsic type amorphous silicon layer and the p-type amorphous silicon layer are laterally spaced and sequentially formed on the substrate, and the n-type, intrinsic type and p-type amorphous silicon layers form a photodiode sensor on the substrate;
wherein the intrinsic type amorphous silicon layer is deposited from a gas mixture having a hydrogen gas to silane gas ratio greater than 4. - View Dependent Claims (18, 19)
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Specification