Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method

• US 7,955,916 B2
• Filed: 05/15/2008
• Issued: 06/07/2011
• Est. Priority Date: 05/18/2007
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Arai, Toshiaki, Hayashi, Naoki
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US12/121,398
• Publication Number:
  US 20080283842A1
• Time in Patent Office: 1,118 Days
• Field of Search: 438/158, 438/166, 257/E21.414, 257/E29.294
• US Class Current: 438/166
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.

Claims

1. A method for making a semiconductor apparatus, said method comprising:

forming a gate electrode on a substrate;

forming a laminate structure over the gate electrode, the laminate structure being an insulating film having (a) a first layer including a metal oxide and (b) a second layer, the second layer being between the gate electrode and the first layer;

forming a semiconductor thin film on the laminate structure;

forming a light absorption layer above said laminate structure; and

irradiating an energy beam of a wavelength capable of being absorbed by said light absorption layer on said light absorption layer and simultaneously crystallizing the first layer of said insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.

2. The method according to claim 1, wherein said energy beam is irradiated partly on said gate electrode.

3. The method according to claim 1, wherein said energy beam is irradiated on part of said gate electrode.

4. The method according to claim 1, wherein the semiconductor thin film is in contact with the first layer, the semiconductor thin film comprises an amorphous silicon film that crystallizes into a fine crystalline silicon film by means of heat generated in said light absorption layer.

5. The method according to claim 1, further comprising:

forming a buffer layer on the semiconductor thin film and above said laminate structure, the buffer layer being between the semiconductor thin film and the light absorption layer.

6. A method for making a thin film transistor substrate comprising the steps of:

forming a gate electrode on a substrate;

forming, on the substrate, a laminate structure of a gate insulating film made of (a) first layer including a metal oxide, and (b) a second layer, the second layer being between the gate electrode and the first layer;

forming a semiconductor thin film on the laminate structure;

forming a light absorption layer on top of said laminate structure; and

irradiating said light absorption layer with an energy beam of a wavelength capable of being absorbed by said light absorption layer and simultaneously crystallizing said gate insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.

7. A method for making a display apparatus, wherein a thin film transistor and a pixel electrode are formed on a substrate, the method comprising the steps of:

forming a gate electrode on a substrate;

forming, on said substrate, a laminate structure of a gate insulating film made of (a) a first layer including a metal oxide, and (b) a second layer, the second layer being between the gate electrode and the first layer;

forming a semiconductor thin film on said laminate structure;

forming a light absorption layer above said laminate structure; and

irradiating said light absorption layer with an energy beam of a wavelength capable of being absorbed by said light absorption layer and simultaneously crystallizing said gate insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.