Using crack arrestor for inhibiting damage from dicing and chip packaging interaction failures in back end of line structures
First Claim
1. A method of forming a semiconductor product comprising a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip with said semiconductor substrate having a top surface and a perimeter;
- an active device (FEOL) layer on said top surface, a BEOL layer on top of said FEOL layer, and a barrier formed in said chip within said perimeter;
comprisingthe step of cutting a trench extending down through said top surface of said semiconductor product, but extending only partially down into said substrate between said barrier and the outermost of said perimeter, prior to performing the following steps;
forming a blanket underfill layer over said product completely covering said semiconductor product and completely filling said trench, anddicing said semiconductor product into chips.
7 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor product comprises a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip. The semiconductor substrate has a top surface and a perimeter. A barrier is formed in the chip within the perimeter. An Ultra Deep Isolation Trench (UDIT) is cut in the top surface of the chip extending down therein between the perimeter and the barrier. A ILD structure with low-k pSICOH dielectric and hard mask layers is formed over the substrate prior to forming the barrier and the UDIT. The ILD structure interconnection structures can be recessed down to the substrate aside from the UDIT.
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Citations
22 Claims
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1. A method of forming a semiconductor product comprising a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip with said semiconductor substrate having a top surface and a perimeter;
- an active device (FEOL) layer on said top surface, a BEOL layer on top of said FEOL layer, and a barrier formed in said chip within said perimeter;
comprisingthe step of cutting a trench extending down through said top surface of said semiconductor product, but extending only partially down into said substrate between said barrier and the outermost of said perimeter, prior to performing the following steps; forming a blanket underfill layer over said product completely covering said semiconductor product and completely filling said trench, and dicing said semiconductor product into chips.
- an active device (FEOL) layer on said top surface, a BEOL layer on top of said FEOL layer, and a barrier formed in said chip within said perimeter;
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2. A method of forming a semiconductor product comprising a semiconductor substrate having a top surface and a bottom surface including a semiconductor chip with said semiconductor substrate having a top surface and a perimeter;
- and a crack stop barrier formed in said chip within said perimeter, and with an active device layer and an interconnection structure above said substrate;
comprisingthe step of cutting a trench extending down through said top surface of said semiconductor product, but extending only partially down into said active device layer or said substrate between said crack stop barrier and the outermost of said perimeter, prior to performing the following steps; forming a blanket underfill layer over said product completely covering said interconnection structure and completely filling said trench, and dicing said semiconductor product into chips. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
- and a crack stop barrier formed in said chip within said perimeter, and with an active device layer and an interconnection structure above said substrate;
Specification