Photoelectric conversion element

• US 7,956,282 B2
• Filed: 09/15/2008
• Issued: 06/07/2011
• Est. Priority Date: 09/15/2008
• Status: Active Grant

• Current Assignee: High Power Opto., Inc.
• Original Assignee: High Power Opto., Inc.
• Inventors: Chang, Chih-Sung, Sheu, Jinn-Kong, Yan, Liang-Jyi
• Primary Examiner(s): Michener; Jennifer K.
• Assistant Examiner(s): MERSHON, JAYNE L
• Application Number:
  US12/210,358
• Publication Number:
  US 20100065121A1
• Time in Patent Office: 995 Days
• Field of Search: 136/252, 136/255, 136/261, 136/262, 136/264, 136/265, 362/183, 257/13, 438/57
• US Class Current: 136/256
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 31/035236 Superlattices; Multiple quantum well structures
• CPC Class Codes: H01L 31/125 Composite devices with photosensitive elements and electroluminescent elements within one single body

Abstract

A photoelectric conversion element comprises a solar-energy epitaxial layer, a bond layer and a LED epitaxial layer, which are stacked sequentially. The bond layer has a plurality of holes allowing light to pass. The solar-energy epitaxial layer receives light via the holes and generates electric energy, and an external secondary battery stores the electric energy. When environmental illumination disappears, the LED epitaxial layer is powered by the external secondary battery to emit light. When the photoelectric conversion element of the present invention applies to outdoor traffic signs, advertisement signboards and indicators, they can operate without external power supply.

Claims

1. A photoelectric conversion element comprising

a solar-energy layer including an N-type semiconductor layer and a P-type semiconductor layer stacked together top down or bottom up, said P-type semiconductor layer being doped on a surface of said N-type semiconductor layer;

a bond layer stacked on said solar-energy layer and having a plurality of holes allowing light to pass, including an indium tin oxide layer, a silver layer, a titanium layer, a platinum layer, a gold layer, an indium layer, a gold layer and a titanium layer stacked sequentially; and

a LED (Light Emitting Diode) layer stacked on one side of said bond layer opposed to said solar-energy layer and including an electron supply layer, a hole supply layer and an active layer;

wherein said indium tin oxide layer directly contacts said LED layer, and said titanium layer directly contacts said solar-energy layer, said holes completely extending through said layers of said bond layer between said solar-energy layer and said LED layer, and said P-type semiconductor layer being located directly under said holes to receive the light passing through said holes.

2. The photoelectric conversion element according to claim 1, wherein said active layer has a MQW (Multiple Quantum Well) structure having a periodical structure containing AlInGaN (Aluminum Indium Gallium Nitride);

said electron supply layer is made of an N-type gallium nitride, and said hole supply layer is made of a P-type gallium nitride.

3. The photoelectric conversion element according to claim 1, wherein said plurality of holes are filled with a transparent material.

4. The photoelectric conversion element according to claim 1, wherein an ohmic contact layer is formed over said LED layer, and a gold-beryllium alloy pad is formed in between said indium tin oxide layer and said LED layer.

5. The photoelectric conversion element according to claim 4, wherein a protection layer is formed outside said LED layer and outside said ohmic contact layer.

6. The photoelectric conversion element according to claim 5, wherein a portion of said LED layer contacting said protection layer has a roughened surface.