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Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy

  • US 7,956,360 B2
  • Filed: 04/06/2007
  • Issued: 06/07/2011
  • Est. Priority Date: 06/03/2004
  • Status: Active Grant
First Claim
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1. A device having a structure that includes a lateral epitaxial overgrowth layer grown in a non-polar direction and having a top surface that is non-polar, the lateral epitaxial overgrowth layer comprising a non-polar III-nitride film with a reduction in dislocation density as compared to III-nitride films grown heteroepitaxially containing dislocation densities in excess of 108 cm

  • 2.

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