Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film

• US 7,956,361 B2
• Filed: 07/09/2010
• Issued: 06/07/2011
• Est. Priority Date: 09/06/2005
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya
• Primary Examiner(s): Nguyen; Dao H
• Application Number:
  US12/833,855
• Publication Number:
  US 20100276689A1
• Time in Patent Office: 333 Days
• Field of Search: 257/52, 257/55, 257/57, 257/66, 257/72, 257/79, 257/98, 257/E21.441, 257/E21.46, 257/E21.461, 257/E29.145, 257/E29.273, 257/E29.299, 438/104, 438/151
• US Class Current: 257/66
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

Claims

1. A field effect transistor comprising:

a channel layer of an amorphous oxide film containing In and Zn,

wherein the amorphous oxide film shows an electron carrier concentration and an electron mobility such that the electron mobility tends to increase as the electron carrier concentration increases,

wherein the amorphous oxide film contains hydrogen or deuterium at a concentration in the range of 10¹⁶ to 10²⁰/cm³.

2. The field effect transistor according to claim 1, wherein the amorphous oxide film further contains an oxide film.