Thin film light emitting diode
DCFirst Claim
Patent Images
1. A vertical topology light emitting device, comprising:
- a conductive support structure;
an adhesion structure over the conductive support structure;
a semiconductor structure over the adhesion structure, wherein the semiconductor structure has a first surface, a second surface and a side surface;
a reflective structure between the adhesion structure and the first surface of the semiconductor structure, the reflective structure also serving as a first electrode, wherein the reflective structure is configured to reflect the light from the semiconductor structure;
a second electrode over the second surface of the semiconductor structure, wherein the second surface is opposite the first surface;
a passivation layer over the semiconductor structure; and
a wavelength converting layer over the second surface of the semiconductor structure.
3 Assignments
Litigations
0 Petitions
Accused Products
Abstract
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.
-
Citations
69 Claims
-
1. A vertical topology light emitting device, comprising:
-
a conductive support structure; an adhesion structure over the conductive support structure; a semiconductor structure over the adhesion structure, wherein the semiconductor structure has a first surface, a second surface and a side surface; a reflective structure between the adhesion structure and the first surface of the semiconductor structure, the reflective structure also serving as a first electrode, wherein the reflective structure is configured to reflect the light from the semiconductor structure; a second electrode over the second surface of the semiconductor structure, wherein the second surface is opposite the first surface; a passivation layer over the semiconductor structure; and a wavelength converting layer over the second surface of the semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69)
-
Specification