High efficiency light emitting diode (LED)
First Claim
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1. An optical device, comprising:
- a light emitting device comprised of at least an n-type layer having an n-type electrode, an active region, a p-type layer, and an n-type ZnO layer bonded to the p-type layer, wherein the n-type ZnO layer comprises at least one first shaped optical element for extracting light emitted by the active region, the first shaped optical element is shaped as a cone, a p-type electrode is placed on top of the cone, and the cone'"'"'s base is bonded to the p-type layer;
at least one second shaped optical element comprising a conical lens encapsulating both the light emitting device and the at least one first shaped optical element for extracting light emitted by the active region and the first shaped optical elements; and
a phosphor, optically coupled to the at least one second shaped optical element, wherein light in at least a first wavelength region emitted by the active region passes through the at least one second shaped optical elements and excites the phosphor to emit light in at least a second wavelength region.
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Abstract
An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.
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Citations
24 Claims
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1. An optical device, comprising:
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a light emitting device comprised of at least an n-type layer having an n-type electrode, an active region, a p-type layer, and an n-type ZnO layer bonded to the p-type layer, wherein the n-type ZnO layer comprises at least one first shaped optical element for extracting light emitted by the active region, the first shaped optical element is shaped as a cone, a p-type electrode is placed on top of the cone, and the cone'"'"'s base is bonded to the p-type layer; at least one second shaped optical element comprising a conical lens encapsulating both the light emitting device and the at least one first shaped optical element for extracting light emitted by the active region and the first shaped optical elements; and a phosphor, optically coupled to the at least one second shaped optical element, wherein light in at least a first wavelength region emitted by the active region passes through the at least one second shaped optical elements and excites the phosphor to emit light in at least a second wavelength region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A Light Emitting Diode (LED) assembly, comprising:
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a substrate; a light emitting device, comprising; an n-type Group III nitride layer formed on the substrate; an active layer, formed on the n-type Group III nitride layer, wherein the active layer emits light in at least a first wavelength region; a p-type Group III nitride layer, formed on the active layer; and at least one n-type oxide layer, bonded to the p-type Group-III nitride layer, for extracting light emitted by the active layer, the at least one n-type oxide layer being shaped into a cone that increases the efficiency of the light emitting device by reducing internal reflection of the light in the light emitting device, wherein a p-type electrode is placed on top of the cone, and the cone'"'"'s base is bonded to the p-type Group-III nitride layer; an optical element, optically coupled to the at least one n-type oxide layer, for extracting light emitted by the active layer, the optical element being shaped into a conical lens and encapsulating both the light emitting device and the at least one n-type oxide layer; and a phosphor, optically coupled to the at least one n-type oxide layer, wherein light in at least the first wavelength region emitted by the light emitting device passes through the phosphor and excites the phosphor to emit light in at least a second wavelength region. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A Light Emitting Diode (LED) emitting multiple wavelength regions of light, comprising:
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an n-type Group III nitride layer; an active Group III nitride layer formed on or above the n-type Group III nitride layer, wherein the active Group III nitride layer emits light in at least a first wavelength region; a p-type Group III nitride layer formed on or above the active Group III nitride layer; at least one n-type oxide layer, bonded to the p-type Group III nitride layer, for extracting light emitted by the active layer, wherein the at least one n-type oxide layer is substantially transparent in the first wavelength region, the at least one n-type oxide layer being shaped into a cone that increases the efficiency of the LED by reducing internal reflection of the light in the LED, a p-type electrode being placed on top of the cone, and the cone'"'"'s base being bonded to the p-type Group III nitride layer; a conical lens, encapsulating both the active Group III nitride layer and the n-type oxide layer, wherein the lens increases the efficiency of the LED by reducing light absorption in the LED; and a phosphor, optically coupled to the at least one n-type oxide layer such that light in at least the first wavelength region strikes the phosphor and excites the phosphor to emit light in at least a second wavelength region, such that light in at least the first wavelength region and the second wavelength region are emitted by the LED.
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Specification