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Semiconductor light-emitting device with high light-extraction efficiency

  • US 7,956,373 B2
  • Filed: 04/17/2008
  • Issued: 06/07/2011
  • Est. Priority Date: 04/20/2007
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device, comprising:

  • a substrate;

    a multi-layer structure, formed on the substrate, comprising a light-emitting region;

    a top-most layer, formed on the multi-layer structure, the lower part of the sidewall of the top-most layer exhibiting a first surface morphology relative to a first pattern, the upper part of the sidewall of the top-most layer exhibiting a second surface morphology relative to a second pattern, the first pattern being different from the second pattern; and

    at least one electrode, formed on the top-most layer and on the multi-layer structure.

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