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Large grain size conductive structure for narrow interconnect openings

  • US 7,956,463 B2
  • Filed: 09/16/2009
  • Issued: 06/07/2011
  • Est. Priority Date: 09/16/2009
  • Status: Active Grant
First Claim
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1. An interconnect structure comprising:

  • a dielectric material including at least one opening therein;

    a grain growth promotion layer located within the at least one opening;

    an agglomerated plating seed layer located above upper surfaces of said grain growth promotion layer; and

    a conductive structure located within the at least one opening and atop upper surfaces of the agglomerated plating seed layer, said conductive structure comprising a metal-containing conductive material having a bamboo microstructure, an average grain size of larger than 0.05 microns, and conductive grains that have a (111) crystal orientation.

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