Large grain size conductive structure for narrow interconnect openings
First Claim
1. An interconnect structure comprising:
- a dielectric material including at least one opening therein;
a grain growth promotion layer located within the at least one opening;
an agglomerated plating seed layer located above upper surfaces of said grain growth promotion layer; and
a conductive structure located within the at least one opening and atop upper surfaces of the agglomerated plating seed layer, said conductive structure comprising a metal-containing conductive material having a bamboo microstructure, an average grain size of larger than 0.05 microns, and conductive grains that have a (111) crystal orientation.
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Abstract
An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer, a grain growth promotion layer, an agglomerated plating seed layer, an optional second plating seed layer a conductive structure. The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.
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Citations
21 Claims
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1. An interconnect structure comprising:
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a dielectric material including at least one opening therein; a grain growth promotion layer located within the at least one opening; an agglomerated plating seed layer located above upper surfaces of said grain growth promotion layer; and a conductive structure located within the at least one opening and atop upper surfaces of the agglomerated plating seed layer, said conductive structure comprising a metal-containing conductive material having a bamboo microstructure, an average grain size of larger than 0.05 microns, and conductive grains that have a (111) crystal orientation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 10, 11, 12)
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8. An interconnect structure comprising:
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a dielectric material including at least one opening therein; a grain growth promotion layer located within the at least one opening; an agglomerated plating seed layer located above upper surfaces of said grain growth promotion layer; and a conductive structure located within the at least one opening and atop upper surfaces of the agglomerated plating seed layer, said conductive structure comprising a metal-containing conductive material having a bamboo microstructure and an average grain size of larger than 0.05 microns, wherein another plating seed layer is located between said agglomerated plating seed layer and said conductive structure.
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13. A method of forming an interconnect structure comprising:
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forming at least one opening in a dielectric material; forming a grain growth promotion layer within said at least one opening; forming an agglomerated plating seed layer within the at least one opening; and forming a conductive structure within said at least one opening atop said agglomerated plating seed layer, said conductive structure including a metal-containing conductive material having a bamboo microstructure, an average grain size of larger than 0.05 microns, and conductive grains that have a (111) crystal orientation. - View Dependent Claims (14, 15, 16, 17, 19, 20, 21)
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18. A method of forming an interconnect structure comprising:
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forming at least one opening in a dielectric material; forming a grain growth promotion layer within said at least one opening; forming an agglomerated plating seed layer within the at least one opening; forming another plating seed layer atop the agglomerated plating seed layer; and forming a conductive structure within said at least one opening atop said agglomerated plating seed layer, said conductive structure including a metal-containing conductive material having a bamboo microstructure and an average grain size of larger than 0.05 microns.
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Specification