MEMS structure having a stress inverter temperature-compensated resonator member
First Claim
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1. A MEMS structure, comprising:
- a stress inverter member coupled to a substrate, the stress inverter member having a major axis and a minor axis; and
a resonator member housed in said stress inverter member and suspended above said substrate.
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Abstract
A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
48 Citations
24 Claims
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1. A MEMS structure, comprising:
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a stress inverter member coupled to a substrate, the stress inverter member having a major axis and a minor axis; and a resonator member housed in said stress inverter member and suspended above said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A MEMS structure, comprising:
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a frame coupled to a substrate by a pair of anchor points, the frame having a major axis and a minor axis and wherein the coefficient of thermal expansion (CTE) of said frame is different from the CTE of said substrate; a resonator member housed in said frame and suspended above said substrate, wherein said resonator member is, in one plane, completely surrounded by said frame; and a pair of electrodes coupled with said substrate on either side of said resonator member; where in response to a first applied stress, the frame is configured to apply a second, opposite, stress to said resonator member. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for altering the thermal coefficient of frequency of a MEMS structure, comprising:
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providing a resonator member housed in a frame coupled to a substrate, the frame having a major axis and a minor axis, wherein said resonator member is suspended above said substrate, and wherein the coefficient of thermal expansion (CTE) of said frame is different from the CTE of said substrate; and applying a first stress to said frame, wherein, in response to applying said first stress, said frame applies a second, opposite, stress to said resonator member. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. A MEMS structure, comprising:
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a stress inverter member coupled to a substrate, the stress inverter member having a first longer axis and a second shorter axis; and a resonator member housed in said stress inverter member and suspended above said substrate, the resonator member being attached to the stress inverter member between two opposing points on the first longer axis of the stress inverter member, and the stress inverter member being coupled to the substrate by a pair of anchor points that are aligned parallel with the second shorter minor axis.
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23. A MEMS structure, comprising:
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a frame coupled to a substrate by a pair of anchor points, the frame having a first longer axis and a second shorter axis and wherein the coefficient of thermal expansion (CTE) of said frame is different from the CTE of said substrate; a resonator member housed in said frame and suspended above said substrate, wherein said resonator member is, in one plane, completely surrounded by said frame, the resonator member being attached to the frame between two opposing points on the first longer axis of the frame, and the frame being coupled to the substrate by a pair of anchor points that are aligned parallel with the second shorter minor axis; and a pair of electrodes coupled with said substrate on either side of said resonator member.
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24. A method for altering the thermal coefficient of frequency of a MEMS structure, comprising:
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providing a resonator member housed in a frame coupled to a substrate, the frame having a first longer axis and a second shorter axis, wherein said resonator member is suspended above said substrate, wherein the coefficient of thermal expansion (CTE) of said frame is different from the CTE of said substrate, the resonator member being attached to the frame between two opposing points on the first longer axis of the frame, and the frame being coupled to the substrate by a pair of anchor points that are aligned parallel with the second shorter minor axis; and applying a first stress to said frame, wherein, in response to applying said first stress, said frame applies a second, opposite, stress to said resonator member.
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Specification