Electrical connection of a substrate within a vacuum device via electrically conductive epoxy/paste

• US 7,956,521 B2
• Filed: 07/10/2008
• Issued: 06/07/2011
• Est. Priority Date: 07/10/2008
• Status: Expired due to Fees

• Current Assignee: Exelis Incorporated (L3Harris Technologies, Inc.)
• Original Assignee: ITT Manufacturing Enterprises, Inc. (ITT, Inc.)
• Inventors: Brown, Benjamin
• Primary Examiner(s): Patel; Nimeshkumar D
• Assistant Examiner(s): Raleigh; Donald L
• Application Number:
  US12/170,562
• Publication Number:
  US 20100006765A1
• Time in Patent Office: 1,062 Days
• Field of Search: 313/103.R, 313/103.CM, 313/105.CM, 313/377, 250/207, 250/370.08, 438/60, 257/E31.001, 257/183.1, 257/251, 257/678, 257/700, 257/703, 257/719, 257/697, 257/734, 257/783, 257/784, 257/E21.456, 257/E29.227, 257/E51.048
• US Class Current: 313/103.0CM
• CPC Class Codes: H01J 2231/50068 Electrical
• CPC Class Codes: H01J 31/507 using a large number of channels, e.g. microchannel plates
• CPC Class Codes: H01J 43/246 Microchannel plates [MCP] image amplification tubes using MCP H01J31/507
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15174 in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/15312 being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

An image intensifier includes a microchannel plate (MCP) having an output surface, and a ceramic substrate having an outer surface. The output surface of the MCP and the outer surface of the ceramic substrate are oriented facing each other. An imager is substantially buried within the ceramic substrate, and an input surface of the imager is exposed to receive electrons from the output surface of the MCP. The input surface of the imager and the outer surface of the ceramic substrate are oriented in substantially the same plane. The input surface of the imager and the outer surface of the ceramic substrate are disposed at a very close distance from the output surface of the MCP. The imager includes input/output pads, and the ceramic substrate includes input/output pads. A conductive epoxy connects a respective input/output pad of the imager to a respective input/output pad of the ceramic substrate.

Claims

1. An image intensifier comprising

a microchannel plate (MCP) having an output surface, and

a ceramic substrate having an outer surface,

wherein the output surface of the MCP and the outer surface of the ceramic substrate are oriented facing each other,

an imager is substantially buried within the ceramic substrate, and

an input surface of the imager is exposed to receive electrons from the output surface of the MCP;

and

the ceramic substrate includes a pocket having a seat at a predetermined depth,

the imager is configured to be received in the pocket,

a bottom surface of the imager is disposed directly on top of the seat, and

the top surface of the ceramic substrate and the input surface of the imager are substantially coplanar;

a conductive epoxy spans between (a) input/output pads disposed on the input surface of the imager and (b) input/output pads disposed on the top surface of the ceramic substrate for electrically connecting the imager to the ceramic substrate; and

a non-conductive epoxy is deposited in the pocket, and

the non-conductive epoxy is configured to fill gaps between (a) end surfaces of the imager inserted in the pocket and (b) walls of the pocket.

2. The image intensifier of claim 1 wherein the input surface of the imager and the outer surface of the ceramic substrate are disposed at a distance from the output surface of the MCP that is less than or equal to 0.005 inches.

3. The image intensifier of claim 1 wherein the imager includes a CMOS (complementary metal oxide semiconductor) device.

4. The image intensifier of claim 1 wherein the imager includes a CCD (charge coupled device).

5. An image intensifier comprising

an electron gain device having an output surface,

an electron sensing device having an input surface, positioned below the output surface of the electron gain device, for receiving light from the output surface of the electron gain device, and

a ceramic substrate disposed below the output surface of the electron gain device for housing the electron sensing device,

wherein

the ceramic substrate includes a pocket for housing the electron sensing device, and

the pocket is of a predetermined depth, so that the top surface of the ceramic substrate is substantially coplanar with the input surface of the electron sensing device;

and

input/output pads are disposed on the top surface of the ceramic substrate,

input/output pads are disposed on the input surface of the electron sensing device, and

multiple conductive epoxy spanning between the input/output pads of the ceramic substrate and the electron sensing device to provide electrical connections; and

non-conductive epoxy is disposed below at least one conductive epoxy span for providing support to the at least one conductive epoxy span.

6. The image intensifier of claim 5 wherein the electronic sensing device is an imager, and

the electron gain device is an MCP.