Integrated sensor and magnetic field concentrator devices

• US 7,956,604 B2
• Filed: 07/09/2008
• Issued: 06/07/2011
• Est. Priority Date: 07/09/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Ausserlechner, Udo
• Primary Examiner(s): Aurora; Reena
• Application Number:
  US12/169,746
• Publication Number:
  US 20100007339A1
• Time in Patent Office: 1,063 Days
• Field of Search: 324/207.21, 324/207.2, 324/207.25, 324/251, 324/252, 324/165
• US Class Current: 324/207.21
• CPC Class Codes: G01P 3/487 delivered by rotating magnets
• CPC Class Codes: G01R 33/0005 Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types G01R33/0206 takes precedence
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

Embodiments of the invention are related to integrated sensor and magnetic concentrator devices and methods. In one embodiment, an integrated circuit comprises a sensor device and a magnetic field concentrator. The sensor device comprises a first sensor element, a second sensor element, and a third sensor element, the first sensor element spaced apart from the third sensor element by a first gap, and the second sensor element spaced apart from the third sensor element by a second gap. The magnetic field concentrator comprises a first magnetic element disposed in the first gap and a second magnetic element disposed in the second gap.

Claims

1. An integrated circuit comprising:

a speed sensor device comprising a first speed xMR sensor element, a second speed xMR sensor element, and a third direction xMR sensor element, the first sensor element spaced apart from the third sensor element by a first gap, and the second sensor element spaced apart from the third sensor element by a second gap; and

a magnetic field concentrator comprising a first magnetic element disposed in the first gap and a second magnetic element disposed in the second gap.

2. The integrated circuit of claim 1, wherein the magnetic field concentrator is configured to guide magnetic flux perpendicularly to the first, second and third sensor elements.

3. The integrated circuit of claim 2, wherein the magnetic flux is provided by an external source.

4. The integrated circuit of claim 1, wherein the xMR sensor elements comprise at least one of an anisotropic magnetoresistive (AMR) sensor element, a tunneling magnetoresistive (TMR) sensor element, a colossal magnetoresistive (CMR) sensor element, or a giant magnetoresistive (GMR) sensor element.

5. The integrated circuit of claim 1, wherein the first, second and third sensor elements comprise at least one of a U-shape, a meander, or a strip.

6. The integrated circuit of claim 1, wherein the first and second gaps are each about 20 micrometers or less.

7. The integrated circuit of claim 6, wherein the first and second gaps are each about 10 micrometers or less.

8. The integrated circuit of claim 1, wherein the magnetic field concentrator further comprises a third magnetic element and a fourth magnetic element.

9. The integrated circuit of claim 1, wherein the first and second sensor elements each comprise two portions forming a Wheatstone bridge circuit.

10. The integrated circuit of claim 1, wherein the first and second magnetic elements comprise a soft magnetic material.

11. The integrated circuit of claim 1, wherein a length of each of the first and second magnetic elements is longer than a length of each of the first, second and third sensor elements.

12. The integrated circuit of claim 1, wherein the first and second sensor elements are spaced apart by about 0.5 millimeters to about 5 millimeters.

13. The integrated circuit of claim 1, wherein the first and second sensor elements are spaced apart by about 2.5 millimeters.

14. The integrated circuit of claim 1, wherein the sensor device and the magnetic field concentrator are disposed on a die.

15. A method comprising:

providing an integrated circuit comprising a speed sensor and a magnetic field concentrator, the speed sensor comprising a first speed xMR sensor element, a second speed xMR sensor element, and a third direction xMR sensor element;

exposing the integrated circuit to a magnetic field; and

guiding a magnetic flux perpendicularly to the speed sensor by the magnetic field concentrator.

16. The method of claim 15, further comprising:

shunting an undesired magnetic field component by the magnetic field concentrator.

17. An integrated circuit comprising:

a first speed xMR sensor element;

a second speed xMR sensor element spaced apart from the first sensor element;

a third direction xMR sensor element arranged between the first and second speed xMR sensor elements;

a first magnetic element arranged between the first and third sensor elements; and

a second magnetic element arranged between the second and third sensor elements and forming a magnetic field concentrator in combination with the first magnetic element.

18. The integrated circuit of claim 17, wherein the first, second and third sensor elements form a speed sensor.

19. The integrated circuit of claim 17, wherein the magnetic field concentrator is configured to guide magnetic flux in a direction perpendicular to the first, second and third sensor elements.

20. The integrated circuit of claim 17, wherein the first, second and third sensor elements have a first length, and wherein the first and second magnetic elements have a second length longer than the first length.

21. An integrated circuit comprising:

a speed sensor device comprising at least two xMR sensor elements spaced apart from each other on a die to form a first gap and at least one additional xMR sensor element comprising a direction xMR sensor element disposed in the first gap between the at least two xMR sensor elements; and

a magnetic field concentrator disposed in the first gap and configured to guide magnetic flux from an external source in a direction perpendicular to the at least two xMR sensor elements.

22. The integrated circuit of claim 21, wherein the at least two xMR sensor elements comprise speed xMR sensor elements, and wherein the magnetic field concentrator comprises first and second magnetic layers, the first magnetic layer disposed in the first gap between one of the at least two xMR sensor elements and at least one additional sensor element and the second magnetic layer disposed in the first gap between another one of the at least two xMR sensor elements and the at least one additional sensor element.

23. The integrated circuit of claim 21, wherein the at least two xMR sensor elements are selected from the group consisting of an anisotropic magnetoresistive (AMR) sensor element, a tunneling magnetoresistive (TMR) sensor element, a colossal magnetoresistive (CMR) sensor element, and a giant magnetoresistive (GMR) sensor element.