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System and method of removing chamber residues from a plasma processing system in a dry cleaning process

  • US 7,959,970 B2
  • Filed: 03/31/2004
  • Issued: 06/14/2011
  • Est. Priority Date: 03/31/2004
  • Status: Expired due to Fees
First Claim
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1. A method of removing fluoro-carbon polymer chamber residue from a plasma processing system, comprising:

  • introducing a process gas into a process chamber of the plasma processing system, the process gas consisting of CO, or CO in combination with inert Ar gas;

    maintaining a pressure between 10 mTorr and 100 mTorr within the process chamber;

    generating a plasma from the process gas;

    exposing the fluoro-carbon polymer chamber residue to the plasma in a waferless dry cleaning process to form a volatile reaction product from the residue, where a shield wafer is not provided on a substrate holder of the plasma processing system so that the substrate holder is cleaned by the waferless dry cleaning process; and

    exhausting the reaction product from the process chamber, wherein the method of removing fluoro-carbon polymer chamber residue using a process gas consisting of CO or CO in combination with Ar results in reduced chamber residue when compared to a method of removing fluoro-carbon polymer chamber residue using a process gas consisting of Ar in combination with O2.

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