Method for transfer of a thin layer

• US 7,960,248 B2
• Filed: 12/16/2008
• Issued: 06/14/2011
• Est. Priority Date: 12/17/2007
• Status: Expired due to Fees

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Di Cioccio, Léa
• Primary Examiner(s): Booth; Richard A.
• Application Number:
  US12/336,229
• Publication Number:
  US 20090156016A1
• Time in Patent Office: 910 Days
• Field of Search: 438455-459, 257/E21.122
• US Class Current: 438/459
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method for transferring a thin layer from an initial substrate includes forming an assembly of the initial substrate with one face of a silicone type polymer layer, this face having been treated under an ultraviolet radiation, and processing the initial substrate to form the thin layer on the silicone type polymer layer.

Claims

1. A preparation method for the transfer of a thin layer from an initial substrate, the method comprising the following steps:

a) treating one face of a silicone type polymer layer by ultraviolet radiation, to transform the surface of the polymer into an oxide layer,

b) directly bonding the initial substrate with the surface of the polymer layer, and

c) processing the initial substrate to form the thin layer on the silicone type polymer layer.

2. The method according to claim 1, wherein processing the initial substrate comprises mechanical or chemical polishing, or both.

3. The method according to claim 1, further comprising creating a buried fragile zone in the initial substrate before step a), by implanting ionic or atomic species, or both, thereby delimiting the thin layer in the initial substrate, and wherein processing the initial substrate comprises applying a heat or mechanical fracture treatment, or both, to the initial substrate along the buried fragile zone.

4. The method according to claim 3, wherein applying the fracture treatment comprises applying a thermal treatment at a temperature below the silicone decomposition temperature.

5. The method according to claim 3 further comprising applying a weakening preliminary annealing before step b).

6. A method for transferring a thin layer comprising a preparation method according to claim 1, and further comprising a transferring the thin layer onto a transfer substrate.

7. The method according to claim 6, wherein the transfer substrate comprises a silicone material.

8. The method according to claim 6, further comprising a step of peeling the silicone type polymer layer after transferring the thin layer onto the transfer substrate.

9. The method according to claim 8, wherein the peeling induces a separation at interface between the silicone type polymer layer and the oxide layer.

10. The method according to claim 9, wherein the peeling induces a separation in the silicone type polymer layer.

11. The method according to claim 10, further comprising a step of chemically eliminating residual silicone.

12. The method according to claim 9, further comprising eliminating remaining portions of the oxide layer.

13. The method according to claim 1, wherein the silicone type polymer layer comprises polydimethylsiloxane (PDMS).

14. The method according to claim 1, wherein treating by ultraviolet radiation comprises treating under an ozone atmosphere.

15. The method according to claim 1 further comprising applying a mechanical treatment to participate firstly in the separation of the thin layer bonded to the silicone type polymer layer, and secondly the remaining initial substrate.

16. The method according to claim 15, wherein applying the mechanical treatment comprises inserting a blade or a curve for stressing.

17. The method according to claim 1 further comprising a step of depositing an oxide layer or a nitride layer on the initial substrate before step a).

18. The method according to claim 1, wherein the thin layer comprises a semiconducting material.

19. The method according to the claim 18, wherein the thin layer comprises Si, Germanium, SiC, or GaN.