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Etching method, pattern forming process, thin-film transistor fabrication process, and etching solution

  • US 7,960,289 B2
  • Filed: 11/20/2007
  • Issued: 06/14/2011
  • Est. Priority Date: 12/05/2006
  • Status: Expired due to Fees
First Claim
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1. An etching method for etching an amorphous oxide semiconductor film including indium and at least one of gallium, zinc or a combination of gallium and zinc;

  • the method comprising subjecting the amorphous oxide semiconductor film to selective etching relative to indium tin oxide (ITO) with an alkaline etching solution.

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