Engineered fluoride-coated elements for laser systems

• US 7,961,383 B2
• Filed: 02/26/2008
• Issued: 06/14/2011
• Est. Priority Date: 02/28/2007
• Status: Active Grant

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Wang, Jue, Schreiber, Horst
• Primary Examiner(s): NGUYEN, THONG Q
• Application Number:
  US12/072,427
• Publication Number:
  US 20080204862A1
• Time in Patent Office: 1,204 Days
• Field of Search: 359350-361, 359577-590
• US Class Current: 359/359
• CPC Class Codes: G02B 5/0833 comprising inorganic materials only
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06
• CPC Class Codes: G03F 7/70958 Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
• CPC Class Codes: H01S 3/08059 Constructional details of the reflector, e.g. shape mirrors in general G02B5/08; mountings for mirrors G02B7/18
• CPC Class Codes: H01S 3/2251 ArF, i.e. argon fluoride is comprised for lasing around 193 nm
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

The invention is directed to elements having fluoride coated surfaces having multiple layers of fluoride material coatings for use in laser systems, and in particular in laser systems operating at wavelength <200 nm. In a particular embodiment the invention is directed to highly reflective mirrors for use in wavelengths <200 nm laser systems. The invention describes the mirrors and a method of making them that utilizes a plurality of periods of fluoride coatings, each period comprising one layer a high refractive index fluoride material and one layer low refractive index fluoride material, and additionally at least one layer of an amorphous silica material. The silica material can be inserted between each period, inserted between a stack consisting of a plurality of periods, and, optionally, can also be applied as the final layer of the finished element to protect the element.

Claims

1. An element for use in wavelengths less than 200 nm laser systems, said element comprising:

a substrate,

a plurality of periods of fluoride coating materials, each of said periods comprising at least one layer of a high refractive index fluoride material and at least one layer of a low refractive fluoride material,

a plurality of layers of an amorphous SiO₂ based material selected from the group consisting of amorphous silica, amorphous F-doped SiO₂, amorphous N-doped SiO₂ and amorphous Al₂O₃-doped SiO₂, wherein one of said layers of amorphous SiO₂ is inserted between periods of said fluoride coating materials or between a stack of a plurality said periods,

wherein said high refractive index fluoride material has an index in the range of 1.65 to 1.75 and said low refractive fluoride material has an index in the range of 1.35 to 1.45, and

wherein the thickness of the amorphous SiO₂ layer inserted between the periods of high and low refractive index materials is in the range of 5 nm to 75 nm.

2. The element according to claim 1, wherein a last coating material applied to said element is a layer of an amorphous SiO₂ material selected from the group consisting of amorphous silica, amorphous F-doped SiO₂, amorphous N-doped SiO₂ and amorphous Al₂O₃-doped SiO₂.

3. The element according to claim 2, wherein the last coating material applied to said element is the layer of the SiO₂ material having a thickness in the range of 10 nm to 150 nm.

4. The element according to claim 1, wherein the thickness of each period of fluoride coating material is in the range of 50 nm to 90 nm.

5. The element according to claim 1, wherein the thickness of the high refractive index layer within each period of fluoride coating material is in the range of 20 nm to 40 nm.

6. The element according to claim 1, wherein the thickness of the low refractive index layer within each period of fluoride coating material is in the range of 30 nm to 50 nm.

7. The element according to claim 1, wherein said element is selected from the group consisting of reflective mirrors, beamsplitters, prisms, lenses, and output couplers.

8. The element according to claim 1, wherein the element is a reflective mirror.

9. The element according to claim 1, wherein the high refractive index material is selected from the group consisting of GdF₃ and LaF₃.

10. The element according to claim 1, wherein the low refractive index material is selected from the group consisting of MgF₂, CaF₂ and AlF₃.

11. The element according to claim 1, further comprising a coating of an amorphous SiO₂ material between the substrate and the first period of the fluoride coating materials.

12. The element according to claim 11, wherein the thickness of the amorphous SiO₂ layer applied between the substrate and the first period is in the range of 5 nm to 75 nm.

13. The element according to claim 11, wherein the coating of the amorphous SiO₂ material between the substrate and the first period of the fluoride coating materials further comprises at least a quarter-wave high index Al₂O₃ layer and a quarter-wave low index SiO₂ layer.

14. The element according to claim 1, further comprising a coating of aluminum between the substrate and the first period of the fluoride coating materials.

15. The element according to claim 1, wherein the element has a structure based on following formula:

Sub_H(LH)ⁱ2M(LH)^j2M . . . (LH)^k2M

where Sub represents the substrate, where 2M represents a half-wave amorphous SiO₂ layer, where H and L represent the high refractive index fluoride material and the low refractive index fluoride material layers, respectively, and i, j . . . and k represent the stack periods.

16. The element according to claim 1, wherein the element has a structure based on following formula:

Sub_H₀(L₀H₀)ⁱ(LH)^j2M . . . (LH)^k2M

where Sub represents the substrate, where 2M represents a half-wave amorphous SiO₂ layer, where H and L represent the high refractive index fluoride material and the low refractive index fluoride material layers, respectively, where H₀ and L₀ corresponds to a quarter-wave high index Al₂O₃ layer and a quarter-wave low index SiO₂ layer, and i, j . . . and k represent the stack periods.

17. The element according to claim 1, wherein the element has a structure based on following formula:

Sub_(H₀L₀)ⁱH(LH)^j2M . . . H(LH)^k2M

where Sub represents the substrate, where 2M represents a half-wave amorphous SiO₂ layer, where H and L represent the high refractive index fluoride material and the low refractive index fluoride material layers, respectively, where H₀ and L₀ corresponds to a quarter-wave high index Al₂O₃ layer and a quarter-wave low index SiO₂ layer, and i, j . . . and k represent the stack periods.

18. The element according to claim 1, wherein the element has a structure based on following formula:

Sub_A(LH)^j2M . . . (LH)^k2M

where Sub represents the substrate, where A represents an aluminum layer, where 2M represents a half-wave amorphous SiO₂ layer, where H and L represent the high refractive index fluoride material and the low refractive index fluoride material layers, respectively, and i, j . . . and k represent the stack periods.

19. The element according to claim 1, wherein the element has a structure based on following formula:

Sub_AH(LH)^j2M . . . (LH)^k2M

where Sub represents the substrate, where A represents an aluminum layer, where 2M represents a half-wave amorphous SiO₂ layer, where H and L represent the high refractive index fluoride material and the low refractive index fluoride material layers, respectively, and i, j . . . and k represent the stack periods.

20. The element according to claim 1, wherein the element has a structure based on following formula:

Sub_(HL)ⁱ2M H(LH)^j2M . . . (LH)^k2M

where Sub represents the substrate, where 2M represents a half-wave amorphous SiO₂ layer, where H and L represent the high refractive index fluoride material and the low refractive index fluoride material layers, respectively, and i, j . . . and k represent the stack periods.

21. The element according to claim 1, wherein the element has a structure based on following formula:

Sub_(LH)ⁱ2M(LH)^j2M . . . (LH)^k2M

where Sub represents the substrate, where 2M represents a half-wave amorphous SiO₂ layer, where H and L represent the high refractive index fluoride material and the low refractive index fluoride material layers, respectively, and i, j . . . and k represent the stack periods.

22. A reflective mirror element for use in wavelengths less than 200 nm laser systems, said element comprising:

a substrate,

a plurality of periods of fluoride coating materials, each of said periods comprising at least one layer of a high refractive index fluoride material and at least one layer of a low refractive fluoride material,

a plurality of layers of an amorphous SiO₂ based material selected from the group consisting of amorphous silica, amorphous F-doped SiO₂, amorphous N-doped SiO₂ and amorphous Al₂O₃-doped SiO₂, wherein one of said layers of amorphous SiO₂ is inserted between periods of said fluoride coating materials or between a stack of a plurality of said periods, and

wherein the thickness of the amorphous SiO₂ material between the periods is in the range of 5 nm to 75 nm.

23. The reflective mirror element according to claim 22, wherein a last coating material on said mirror element is a layer of an amorphous SiO₂ material, said layer having a thickness in the range of 10 nm to 150 nm.