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Electric circuit device, electric circuit module, and power converter

  • US 7,961,472 B2
  • Filed: 04/26/2007
  • Issued: 06/14/2011
  • Est. Priority Date: 04/27/2006
  • Status: Active Grant
First Claim
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1. An electric circuit device comprising:

  • a plurality of semiconductor chips;

    a plurality of plate-shaped conductors electrically connected to said plurality of semiconductor chips; and

    a plus side terminal and a minus side terminal for transmitting direct current;

    wherein said plurality of semiconductor chips includes a first insulated gate bipolar transistor and a first diode constituting an upper arm portion of an inverter circuit, and a second insulated gate bipolar transistor and a second diode constituting a lower arm portion of the inverter circuit;

    said plurality of plate-shaped conductors includes an intermediate plate-shaped conductor that connects said upper arm portion of the inverter circuit and said lower arm portion of said inverter circuit, a plate-shaped conductor for direct-current positive polarity, and a plate-shaped conductor for direct-current negative polarity;

    said intermediate plate-shaped conductor, said plate-shaped conductor for direct-current positive polarity, and said plate-shaped conductor for direct-current negative polarity are arranged to provide a first region in which said intermediate plate-shaped conductor, said plate-shaped conductor for direct-current positive polarity, and said plate-shaped conductor for direct-current negative polarity are laminated, a second region in which only said intermediate plate-shaped conductor and said plate-shaped conductor for direct-current positive polarity are opposed, and a third region in which only said intermediate plate-shaped conductor and said plate-shaped conductor for direct current negative polarity are opposed;

    said first insulated gate bipolar transistor and said first diode are arranged in the second region that is inserted between said intermediate plate-shaped conductor and said plate-shaped conductor for direct-current positive polarity;

    said second insulated gate bipolar transistor and said second diode are arranged in the third region that is inserted between said intermediate plate-shaped conductor and said plate-shaped conductor for direct-current positive polarity;

    said plate-shaped conductor for direct-current positive polarity is connected with a part that forms said first region of said plate-shaped conductor for direct-current positive polarity; and

    said plate-shaped conductor for direct-current negative polarity is connected with a part that forms said first region of said plate-shaped conductor for direct-current negative polarity.

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