Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer

• US 7,962,863 B2
• Filed: 05/06/2008
• Issued: 06/14/2011
• Est. Priority Date: 05/07/2007
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Verma, Gaurav, Andrews, Scott, Shi, Rui-fang, Su, Bo, Du, Hong
• Primary Examiner(s): Dinh; Paul
• Application Number:
  US12/115,830
• Publication Number:
  US 20090024967A1
• Time in Patent Office: 1,134 Days
• Field of Search: 716 50- 56
• US Class Current: 716/50
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]

Abstract

Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer are provided. One method includes generating simulated images of the reticle features printed on the wafer using different generated models for a set of different values of exposure conditions. The method also includes determining one or more characteristics of the reticle features of the simulated images. In addition, the method includes comparing the one or more characteristics of the reticle features of the simulated images to one or more characteristics of the reticle features printed on the wafer using a lithography process. The method further includes selecting one of the different generated models as the model to be used for predicting the printability of the reticle features based on results of the comparing step.

Claims

1. A computer-implemented method for determining a model for predicting printability of reticle features on a wafer, comprising:

generating different generated models;

generating simulated images of the reticle features printed on the wafer using the different generated models for a set of different values of exposure conditions;

determining one or more characteristics of the reticle features of the simulated images;

comparing the one or more characteristics of the reticle features of the simulated images to one or more characteristics of the reticle features printed on the wafer using a lithography process; and

selecting one of the different generated models as the model to be used for predicting the printability of the reticle features based on results of the comparing step, wherein generating the different generated models, generating the simulated images, said determining, said comparing, and said selecting are performed using a computer system.

2. The method of claim 1, wherein all steps of the computer-implemented method are performed automatically upon receipt of an instruction to perform the computer-implemented method.

3. The method of claim 1, wherein said predicting the printability of the reticle features comprises verifying optical proximity correction features of the reticle features.

4. The method of claim 1, wherein generating the different generated models is performed such that each of the different generated models has one or more different parameters, different values for one or more parameters of the different generated models, or some combination thereof.

5. The method of claim 1, wherein generating the different generated models is performed such that differences in values of one or more parameters of the different generated models are greater than predetermined criteria.

6. The method of claim 1, wherein the different values of the exposure conditions are located in four quadrants of focus and exposure matrix space.

7. The method of claim 1, wherein the different values of the exposure conditions are located in only a subset of four quadrants of focus and exposure matrix space.

8. The method of claim 1, wherein the set of the different values of the exposure conditions comprises values proximate extremes of a process window for the lithography process and best values for the exposure conditions.

9. The method of claim 1, further comprising determining features of interest in the reticle features based on the simulated images.

10. The method of claim 1, further comprising acquiring images of the reticle features printed on the wafer at the different values of the exposure conditions and determining the one or more characteristics of the reticle features printed on the wafer at the different values of the exposure conditions using the acquired images.

11. The method of claim 1, further comprising determining features of interest in the reticle features based on the simulated images, determining locations on the wafer at which the features of interest are printed at the different values of the exposure conditions, and acquiring images of the reticle features printed on the wafer at the locations.

12. The method of claim 1, further comprising acquiring images of the reticle features printed on the wafer at the different values of the exposure conditions from a metrology tool coupled to the computer system configured to perform the computer-implemented method.

13. The method of claim 1, further comprising contouring the simulated images and images of the reticle features printed on the wafer for edge definition and determining the one or more characteristics of the reticle features of the simulated images and the reticle features printed on the wafer using the contoured images.

14. The method of claim 1, wherein the one or more characteristics of the reticle features of the simulated images and the reticle features printed on the wafer comprise critical dimension.

15. The method of claim 1, wherein said selecting comprises determining a figure of merit for each of the different generated models based on the results of said comparing.

16. The method of claim 1, wherein said selecting comprises determining a composite figure of merit for each of the different generated models based on the results of said comparing performed for two or more of the reticle features in the simulated images and in images of the reticle features printed on the wafer.

17. The method of claim 1, wherein said selecting comprises determining a figure of merit for each of the different generated models and selecting the different generated model having the best figure of merit as the model to be used for said predicting the printability of the reticle features.

18. A system configured to determine a model for predicting printability of reticle features on a wafer, comprising:

a simulation engine configured to generate simulated images of the reticle features printed on the wafer using different generated models for a set of different values of exposure conditions; and

a computer system configured to;

generate the different generated models prior to generation of the simulated images by the simulation engine

determine one or more characteristics of the reticle features of the simulated images;

compare the one or more characteristics of the reticle features of the simulated images to one or more characteristics of the reticle features printed on the wafer using a lithography process; and

select one of the different generated models as the model to be used for predicting the printability of the reticle features based on results of the comparison.

19. A non-transitory computer-readable medium, comprising program instructions executable on a computer system for performing a computer-implemented method for determining a model for predicting printability of reticle features on a wafer, wherein the computer-implemented method comprises:

generating different generated models

generating simulated images of the reticle features printed on the wafer using the different generated models for a set of different values of exposure conditions;

determining one or more characteristics of the reticle features of the simulated mages;

comparing the one or more characteristics of the reticle features of the simulated images to one or more characteristics of the reticle features printed on the wafer using a lithography process; and

selecting one of the different generated models as the model to be used for predicting the printability of the reticle features based on results of the comparing step.