Non-volatile memory structure and method of fabrication
First Claim
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1. A method for creating a non-volatile memory array, the method comprising:
- implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering said substrate;
generating increased-width polysilicon columns from said mask columns;
generating bit lines in said substrate at least between said increased-width polysilicon columns;
depositing oxide at least between said polysilicon columns,wherein said generating polysilicon columns comprises;
generating spacers to the sides of said mask columns;
etching at least said first polysilicon layer between said spacers to generate said increased-width polysilicon columns, andwherein said generating polysilicon columns also comprises removing said mask columns and said spacers after said etching.
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Abstract
A method for creating a non-volatile memory array includes implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering the substrate, generating increased-width polysilicon columns from the mask columns, generating bit lines in the substrate at least between the increased-width polysilicon columns and depositing oxide at least between the polysilicon columns.
626 Citations
14 Claims
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1. A method for creating a non-volatile memory array, the method comprising:
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implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering said substrate; generating increased-width polysilicon columns from said mask columns; generating bit lines in said substrate at least between said increased-width polysilicon columns; depositing oxide at least between said polysilicon columns, wherein said generating polysilicon columns comprises;
generating spacers to the sides of said mask columns;etching at least said first polysilicon layer between said spacers to generate said increased-width polysilicon columns, and wherein said generating polysilicon columns also comprises removing said mask columns and said spacers after said etching. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification