Single scan irradiation for crystallization of thin films

• US 7,964,480 B2
• Filed: 10/23/2007
• Issued: 06/21/2011
• Est. Priority Date: 09/19/2003
• Status: Expired due to Fees

• Current Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Original Assignee: Trustees Of Columbia University In The City Of New York (Columbia University)
• Inventors: Im, James S., Van Der Wilt, Paul C.
• Primary Examiner(s): MENZ, LAURA MARY
• Application Number:
  US11/876,974
• Publication Number:
  US 20080035863A1
• Time in Patent Office: 1,337 Days
• Field of Search: 438486-488
• US Class Current: 438/487
• CPC Class Codes: B23K 26/066 by using masks
• CPC Class Codes: C30B 13/24 using electromagnetic waves
• CPC Class Codes: C30B 28/08 by zone-melting
• CPC Class Codes: C30B 35/00 Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
• CPC Class Codes: G03F 7/70041 by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
• CPC Class Codes: G03F 7/70725 control
• CPC Class Codes: Y10S 117/90 Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
• CPC Class Codes: Y10T 117/10 Apparatus
• CPC Class Codes: Y10T 117/1008 with responsive control means

Abstract

A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l′, a width w′, and a spacing between adjacent beams d′; irradiating a region of the film with the patterned beams, said beams having an intensity sufficient to melt and to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating the film and/or the mask, in the x- and y-directions. The distance of translation in the y-direction is about l′/n-δ, where δ is a value selected to overlap the beamlets from one irradiation step to the next. The distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′.

Claims

1. A method of processing a selected region of a film on a substrate in a single scan, comprising:

generating a plurality of laser beam pulses;

directing the plurality of laser beam pulses through a mask to generate a plurality of patterned laser beams;

irradiating a portion of a selected region of a film with one of the plurality of patterned beams, said beam having an intensity that is sufficient to melt the irradiated portion of the film, wherein the irradiated portion of the film crystallizes upon cooling,

moving the film along a first translation pathway and moving the mask along a second translation pathway while successive portions of the selected region are irradiated with patterned beams, such that the selected region of the film is substantially completely crystallized in a single traversal of the patterned beams over the selected region of the film;

wherein the film moves in a constant direction along the first translation pathway during a single traversal of the patterned beams over the selected region of the film.

2. The method of claim 1, wherein the film and the mask move in orthogonal directions.

3. The method of claim 1, wherein the film moves at a constant velocity along the first translation pathway.

4. The method of claim 1, wherein the mask oscillates in positive and negative directions along the second translation pathway during a single traversal of the patterned beams over the selected region of the film.

5. The method of claim 1, wherein the mask moves in a constant direction along the second translation pathway during a single traversal of the patterned beams over the selected region of the film.

6. The method of claim 5, wherein the mask moves at a constant velocity along the second translation pathway during a single traversal of the patterned beams over the selected region of the film.

7. The method of claim 1, wherein the mask moves in more than one direction along the second translation pathway during a single traversal of the patterned beams over the selected region of the film.

8. The method of claim 1, wherein the substrate is defined by x- and y-axes and the film moves in the y-direction and the mask moves in the x-direction.

9. The method of claim 1, wherein the substrate is defined by x- and y-axes and the film moves in the y-direction and the mask moves in the x- and y-directions.

10. The method of claim 1, wherein laser pulse frequency and first and second translation pathways and speeds are selected so that irradiation occurs at the desired location on the film.

11. The method of claim 1, wherein the substrate is defined by x′

- and y′

-axes and the x′

- and y′

-axes of the substrate are offset from the translation directions of film and mask by an angle θ

, where θ

is greater than 0° and

ranges up to about 45°

.

12. The method of claim 1, wherein the mask comprises a plurality of elongated laser-transparent regions in a laser opaque background.

13. The method of claim 12, wherein the elongated regions comprise rectangular regions.

14. The method of claim 1, wherein the mask comprises a plurality of laser-opaque features in a laser-transparent background.

15. The method of claim 14, wherein the movement of the mask defines a pathway about a central location.