Methods of forming nickel sulfide film on a semiconductor device

• US 7,964,490 B2
• Filed: 12/31/2008
• Issued: 06/21/2011
• Est. Priority Date: 12/31/2008
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Clendenning, Scott Bruce, Mukherjee, Niloy, Pillarisetty, Ravi
• Primary Examiner(s): Smith; Matthew S
• Assistant Examiner(s): FAN, SU JYA
• Application Number:
  US12/347,763
• Publication Number:
  US 20100163937A1
• Time in Patent Office: 902 Days
• Field of Search: 438/597, 438/621, 438/674, 438/675, 438/676, 438/677, 257/E21.575, 257/E21.585
• US Class Current: 438/597
• CPC Class Codes: C23C 16/305 Sulfides, selenides, or tellurides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 23/53257 the principal metal being a refractory metal
• CPC Class Codes: H01L 23/53266 Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 29/41791 for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.

Claims

1. A method of forming a semiconductor device comprising:

providing a substrate;

exposing a desired region of the substrate to a nickel-containing precursor;

exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and

exposing the desired region of the substrate to a chemical treatment to form a hydrogen-terminated surface thereon before exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor.

2. The method of claim 1, wherein no reactive annealing process is performed so that the nickel sulfide film does not react with the desired region of substrate.

3. The method of claim 1, wherein the nickel-containing precursor is made of a nickel organometallic compound selected from the group consisting of amidinates, alkyls, allyls, β

-diketonates, β

-diketimines, pyrrolyls, imines, amides, alkoxides, cyclopentadienyls, halides, and heteroleptic compounds.

4. The method of claim 1, wherein the sulfur-containing precursor is made of a material selected from the group of hydrogen sulfide, polysufanes, alkyl sulfides and di-alkyl sulfides.

5. The method of claim 1, wherein the desired region of substrate is made of a material selected from the group consisting of silicon, germanium silicon, germanium, and III-V semiconductor compounds.

6. The method of claim 1, wherein the desired region of substrate is made of an insulative material selected from the group consisting of dielectrics, oxides, and metal oxides.

7. The method of claim 1 further comprising:

repeating exposing desired region of substrate to the nickel-containing precursor and exposing desired region of substrate to the sulfur-containing precursor in an alternating manner.

8. A method of forming a semiconductor device comprising:

providing a substrate;

exposing a desired region of the substrate to a nickel-containing precursor;

exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and

performing a plasma treatment on the desired region of substrate before exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor.

9. The method of claim 8 further comprising:

repeating exposing desired region of substrate to the nickel-containing precursor and exposing desired region of substrate to the sulfur-containing precursor in an alternating manner.

10. The method of claim 8, wherein no reactive annealing process is performed so that the nickel sulfide film does not react with the desired region of substrate.

11. The method of claim 8, wherein the nickel-containing precursor is made of a nickel organometallic compound selected from the group consisting of amidinates, alkyls, allyls, β

-diketonates, β

-diketimines, pyrrolyls, imines, amides, alkoxides, cyclopentadienyls, halides, and heteroleptic compounds.

12. The method of claim 8, wherein the sulfur-containing precursor is made of a material selected from the group of hydrogen sulfide, polysufanes, alkyl sulfides and di-alkyl sulfides.

13. The method of claim 8, wherein the desired region of substrate is made of a material selected from the group consisting of silicon, germanium silicon, germanium, and III-V semiconductor compounds.

14. The method of claim 8, wherein the desired region of substrate is made of an insulative material selected from the group consisting of dielectrics, oxides, and metal oxides.

15. A method of forming a semiconductor device comprising:

providing a substrate;

exposing a desired region of the substrate to a nickel-containing precursor;

exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and

performing a plasma treatment on the desired region of substrate after exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor.

16. The method of claim 15 further comprising:

repeating exposing desired region of substrate to the nickel-containing precursor and exposing desired region of substrate to the sulfur-containing precursor in an alternating manner.

17. The method of claim 15, wherein no reactive annealing process is performed so that the nickel sulfide film does not react with the desired region of substrate.

18. The method of claim 15, wherein the nickel-containing precursor is made of a nickel organometallic compound selected from the group consisting of amidinates, alkyls, allyls, β

-diketonates, β

-diketimines, pyrrolyls, imines, amides, alkoxides, cyclopentadienyls, halides, and heteroleptic compounds.

19. The method of claim 15, wherein the sulfur-containing precursor is made of a material selected from the group of hydrogen sulfide, polysufanes, alkyl sulfides and di-alkyl sulfides.

20. The method of claim 15, wherein the desired region of substrate is made of a material selected from the group consisting of silicon, germanium silicon, germanium, and III-V semiconductor compounds.

21. The method of claim 15, wherein the desired region of substrate is made of an insulative material selected from the group consisting of dielectrics, oxides, and metal oxides.

22. A method of forming a semiconductor device comprising:

providing a substrate;

exposing a desired region of the substrate to a nickel-containing precursor; and

exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region;

wherein exposing the desired region of the substrate to a sulfur-containing precursor comprises exposing the desired region of the substrate simultaneously to a plasma source.

23. The method of claim 22 further comprising:

repeating exposing desired region of substrate to the nickel-containing precursor and exposing desired region of substrate to the sulfur-containing precursor in an alternating manner.

24. The method of claim 22, wherein no reactive annealing process is performed so that the nickel sulfide film does not react with the desired region of substrate.

25. The method of claim 22, wherein the nickel-containing precursor is made of a nickel organometallic compound selected from the group consisting of amidinates, alkyls, allyls, β

-diketonates, β

-diketimines, pyrrolyls, imines, amides, alkoxides, cyclopentadienyls, halides, and heteroleptic compounds.

26. The method of claim 22, wherein the sulfur-containing precursor is made of a material selected from the group of hydrogen sulfide, polysufanes, alkyl sulfides and di-alkyl sulfides.

27. The method of claim 22, wherein the desired region of substrate is made of a material selected from the group consisting of silicon, germanium silicon, germanium, and III-V semiconductor compounds.

28. The method of claim 22, wherein the desired region of substrate is made of an insulative material selected from the group consisting of dielectrics, oxides, and metal oxides.