Methods of forming nickel sulfide film on a semiconductor device
First Claim
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1. A method of forming a semiconductor device comprising:
- providing a substrate;
exposing a desired region of the substrate to a nickel-containing precursor;
exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and
exposing the desired region of the substrate to a chemical treatment to form a hydrogen-terminated surface thereon before exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor.
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Abstract
Embodiments of the present invention describe a method of forming nickel sulfide layer on a semiconductor device. A nickel sulfide layer is formed on a substrate by alternatingly exposing the substrate to a nickel-containing precursor and a sulfur-containing precursor.
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Citations
28 Claims
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1. A method of forming a semiconductor device comprising:
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providing a substrate; exposing a desired region of the substrate to a nickel-containing precursor; exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and exposing the desired region of the substrate to a chemical treatment to form a hydrogen-terminated surface thereon before exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a semiconductor device comprising:
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providing a substrate; exposing a desired region of the substrate to a nickel-containing precursor; exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and performing a plasma treatment on the desired region of substrate before exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor device comprising:
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providing a substrate; exposing a desired region of the substrate to a nickel-containing precursor; exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and performing a plasma treatment on the desired region of substrate after exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A method of forming a semiconductor device comprising:
providing a substrate; exposing a desired region of the substrate to a nickel-containing precursor; and
exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region;wherein exposing the desired region of the substrate to a sulfur-containing precursor comprises exposing the desired region of the substrate simultaneously to a plasma source. - View Dependent Claims (23, 24, 25, 26, 27, 28)
Specification