×

Methods of forming nickel sulfide film on a semiconductor device

  • US 7,964,490 B2
  • Filed: 12/31/2008
  • Issued: 06/21/2011
  • Est. Priority Date: 12/31/2008
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of forming a semiconductor device comprising:

  • providing a substrate;

    exposing a desired region of the substrate to a nickel-containing precursor;

    exposing the desired region of the substrate to a sulfur-containing precursor to form a nickel sulfide film on the desired region; and

    exposing the desired region of the substrate to a chemical treatment to form a hydrogen-terminated surface thereon before exposing the desired region to the nickel-containing precursor or the sulfur-containing precursor.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×