×

Schemes for forming barrier layers for copper in interconnect structures

  • US 7,964,496 B2
  • Filed: 11/21/2006
  • Issued: 06/21/2011
  • Est. Priority Date: 11/21/2006
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a semiconductor structure, the method comprising:

  • providing a substrate;

    forming a low-k dielectric layer over the substrate;

    embedding a conductive wiring in the low-k dielectric layer; and

    thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring, wherein the thermal soaking occurs in a non-plasma environment, the barrier layer comprising a silicide.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×