Schemes for forming barrier layers for copper in interconnect structures
First Claim
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1. A method of forming a semiconductor structure, the method comprising:
- providing a substrate;
forming a low-k dielectric layer over the substrate;
embedding a conductive wiring in the low-k dielectric layer; and
thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring, wherein the thermal soaking occurs in a non-plasma environment, the barrier layer comprising a silicide.
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Abstract
A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring. The lining barrier layer may comprise same materials as the barrier layer, and the lining barrier layer may be recessed before forming the barrier layer and may contain a metal that can be silicided.
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Citations
10 Claims
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1. A method of forming a semiconductor structure, the method comprising:
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providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring in the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring, wherein the thermal soaking occurs in a non-plasma environment, the barrier layer comprising a silicide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor structure, the method comprising:
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providing a substrate; forming a low-k dielectric layer over the substrate; forming an opening extending from a top surface of the low-k dielectric layer into the low-k dielectric layer; forming a first barrier layer lining the opening, wherein the first barrier layer comprises a metal selected from the group consisting essentially of cobalt, nickel, and combinations thereof; embedding a conductive wiring in a remaining portion of the opening; and thermal soaking a top surface of the conductive wiring in a silane-based chemical comprising SiH3(CH3)1 (1MS), SiH2(CH3)2 (2MS), and combinations thereof to form a silicide second barrier layer on the conductive wiring and top edges of the first barrier layer. - View Dependent Claims (10)
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Specification