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Strained silicon on relaxed sige film with uniform misfit dislocation density

  • US 7,964,865 B2
  • Filed: 02/03/2005
  • Issued: 06/21/2011
  • Est. Priority Date: 09/23/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a silicon substrate;

    a relaxed SiGe layer formed on the silicon substrate, said SiGe layer including uniformly distributed misfit dislocations at an interface between the silicon substrate and the relaxed SiGe layer; and

    a tensilely strained silicon layer formed on the relaxed SiGe layer.

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