Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
First Claim
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1. A thin-film transistor comprising:
- a channel layer being formed of an oxide semiconductor transparent to visible light, the channel layer having a refractive index of nx;
a substrate;
a gate-insulating layer disposed in contact with the substrate and having a refractive index of ni; and
a transparent layer disposed in contact with the channel layer and having a refractive index of nt,wherein the channel layer is disposed in contact with the gate-insulating layer, andwherein the transparent layer is disposed in a light-incident side with respect to the channel layer and there is a relationship of ni>
nx>
nt.
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Abstract
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
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Citations
1 Claim
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1. A thin-film transistor comprising:
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a channel layer being formed of an oxide semiconductor transparent to visible light, the channel layer having a refractive index of nx; a substrate; a gate-insulating layer disposed in contact with the substrate and having a refractive index of ni; and a transparent layer disposed in contact with the channel layer and having a refractive index of nt, wherein the channel layer is disposed in contact with the gate-insulating layer, and wherein the transparent layer is disposed in a light-incident side with respect to the channel layer and there is a relationship of ni>
nx>
nt.
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Specification
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsIwasaki, Tatsuya
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Primary Examiner(s)HOANG, QUOC DINH
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Application NumberUS12/263,157Publication NumberTime in Patent Office963 DaysField of Search257/59, 257/72, 257/291, 257/292, 257/443, 257/E29.151, 257/E51.005, 438/149US Class Current257/59CPC Class CodesH01L 29/7869 having a semiconductor body...
