Polarized semiconductor light emitting device with light guiding portions formed within
First Claim
1. A semiconductor light emitting device comprising a semiconductor structure including a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked,wherein the semiconductor structure further includes a plurality of grooves extending from the second conductivity semiconductor layer with a depth reaching to at least an inner part of the active layer in order to divide the active layer, and a plurality of light guide parts being separated from each other by each of the plurality of grooves and alternating with the grooves thereof, the light guide parts having a length greater than a width thereof to selectively emit a polarized component in a length direction thereof,the grooves are arranged along one direction of the width of the light guide parts,the semiconductor structure comprises a first and a second reflective layers, between which the active layer is interposed, andthe light guide parts and the plurality of grooves are disposed between the first and second reflective layers.
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Accused Products
Abstract
A polarized semiconductor light emitting device includes a semiconductor structure having a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked. Also, the semiconductor structure further includes a plurality of light guide parts defined by a plurality of grooves arranged along a predetermined direction. The grooves extend from the second conductivity semiconductor layer with a depth reaching at least the active layer, and the light guide parts have a length greater than a width thereof to selectively emit a polarized component in a length direction thereof.
9 Citations
16 Claims
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1. A semiconductor light emitting device comprising a semiconductor structure including a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked,
wherein the semiconductor structure further includes a plurality of grooves extending from the second conductivity semiconductor layer with a depth reaching to at least an inner part of the active layer in order to divide the active layer, and a plurality of light guide parts being separated from each other by each of the plurality of grooves and alternating with the grooves thereof, the light guide parts having a length greater than a width thereof to selectively emit a polarized component in a length direction thereof, the grooves are arranged along one direction of the width of the light guide parts, the semiconductor structure comprises a first and a second reflective layers, between which the active layer is interposed, and the light guide parts and the plurality of grooves are disposed between the first and second reflective layers.
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15. A semiconductor light emitting device comprising a semiconductor structure including a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer sequentially stacked,
wherein the semiconductor structure further includes: -
a plurality of grooves, the grooves extending from the second conductivity semiconductor layer with a depth reaching to at least an inner part of the active layer in order to divide the active layer, and a plurality of light guide parts being separated from each other by each of the plurality of grooves and alternating with the grooves thereof, and wherein the grooves are arranged along one direction of the width of the light guide parts, the semiconductor structure comprises a first and a second reflective layers, between which the active layer is interposed, and the light guide parts and the plurality of grooves are disposed between the first and second reflective layers.
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16. A semiconductor light emitting device comprising a semiconductor structure including a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer stacked sequentially,
wherein the semiconductor structure further includes a plurality of grooves extending from the second conductivity semiconductor layer with a depth reaching to at least an inner part of the active layer in order to divide the active layer, and a plurality of light guide parts separated from each other by each of the respective grooves of the plurality of grooves and alternating with the grooves thereof, the light guide parts having a length greater than a width thereof to selectively emit a polarized component in a length direction thereof, the grooves are arranged along one direction of the width of the light guide parts, and a period p of the light guide parts satisfy the following equation,
Specification