Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

• US 7,964,881 B2
• Filed: 08/11/2008
• Issued: 06/21/2011
• Est. Priority Date: 10/19/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Park, Ki Yeol, Choi, Pun Jae, Lee, Jin Hyun, Cho, Myong Soo
• Primary Examiner(s): SEFER, AHMED N
• Application Number:
  US12/189,428
• Publication Number:
  US 20090101923A1
• Time in Patent Office: 1,044 Days
• Field of Search: 257/76, 257/89, 257/79, 438/26
• US Class Current: 257/89
• CPC Class Codes: F02M 19/0235 Arrangements of several spray nozzles not provided for in F02M3/00 or F02M11/00
• CPC Class Codes: F02M 9/127 Axially movable throttle valves concentric with the axis of the mixture passage
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Claims

1. A semiconductor light emitting device comprising:

a first conductivity type semiconductor layer;

an active layer on the first conductivity type semiconductor layer;

a second conductivity type semiconductor layer on the active layer;

a second electrode layer on the second conductivity type semiconductor layer;

an insulating layer on the second electrode layer;

a first electrode layer on the insulting layer; and

a conductive substrate on the first electrode layer,

wherein the second electrode layer has an exposed area at an interface between the second electrode layer and the second conductivity type semiconductor layer, and

the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least a part of the first conductivity type semiconductor layer.

2. The semiconductor light emitting device of claim 1, further comprising an electrode pad unit formed at the exposed area of the second electrode layer.

3. The semiconductor light emitting device of claim 1, wherein the exposed area of the second electrode layer is a region exposed by a via hole formed through the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

4. The semiconductor light emitting device of claim 3, wherein the diameter of the via hole increases in a direction from the second electrode layer toward the first conductivity type semiconductor layer.

5. The semiconductor light emitting device of claim 3, wherein an insulating layer is formed on an inner surface of the via hole.

6. The semiconductor light emitting device of claim 1, wherein the exposed area of the second electrode layer is formed at the edge of the semiconductor light emitting device.

7. The semiconductor light emitting device of claim 1, wherein the second electrode layer reflects light generated from the active layer.

8. The semiconductor light emitting device of claim 7, wherein the second electrode layer comprises one metal selected from a group consisting of Ag, Al, and Pt.

9. The semiconductor light emitting device of claim 1, wherein an irregular pattern is formed on a surface opposite to another surface of the first conductivity type semiconductor layer forming the interface with the active layer.

10. The semiconductor light emitting device of claim 9, wherein the irregular pattern has a photonic crystal structure.

11. The semiconductor light emitting device of claim 1, wherein the conductive substrate comprises one metal selected from a group consisting of Au, Ni, Cu, and W.

12. The semiconductor light emitting device of claim 1, wherein the conductive substrate comprises one selected from a group consisting of Si, Ge, and GaAs.