Light-emitting element, display device, and electronic appliance
First Claim
1. A light-emitting device comprising:
- a plastic substrate;
an anode over the plastic substrate;
a first layer over the anode, the first layer generating holes;
a light emitting layer including a light emitting material over the first layer;
a second layer over the light emitting layer, the second layer generating electrons;
a third layer comprising metal oxide over the second layer, the third layer generating holes; and
a cathode being in contact with the third layer.
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Abstract
The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the drive voltage and the increase in the drive voltage over time are small and which can resist long-term use. A layer in contact with an electrode in a light-emitting element is a layer containing a P-type semiconductor or a hole-generating layer such as an organic compound layer containing a material having electron-accepting properties. The light-emitting layer is sandwiched between the hole-generating layers, and an electron-generating layer is sandwiched between the light-emitting layer and the hole-generating layer on a cathode side.
84 Citations
14 Claims
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1. A light-emitting device comprising:
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a plastic substrate; an anode over the plastic substrate; a first layer over the anode, the first layer generating holes; a light emitting layer including a light emitting material over the first layer; a second layer over the light emitting layer, the second layer generating electrons; a third layer comprising metal oxide over the second layer, the third layer generating holes; and a cathode being in contact with the third layer. - View Dependent Claims (2, 3, 12)
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4. A light-emitting device comprising:
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a plastic substrate; a semiconductor layer over the plastic substrate; a gate electrode adjacent to the semiconductor layer with an insulating layer interposed between the gate electrode and the semiconductor layer; an anode over the plastic substrate, the anode electrically connected to the semiconductor layer; a first layer over the anode, the first layer generating holes; a light emitting layer including a light emitting material over the first layer; a second layer over the light emitting layer, the second layer generating electrons; a third layer comprising metal oxide over the second layer, the third layer generating holes; and a cathode being in contact with the third layer. - View Dependent Claims (5, 6, 7, 13)
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8. A light-emitting device comprising:
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a plastic substrate; an anode over the plastic substrate; a first layer over the anode, the first layer generating holes; a light emitting layer including a light emitting material over the first layer; a second layer over the light emitting layer, the second layer generating electrons; a third layer comprising metal oxide over the second layer, the third layer generating holes; a cathode being in contact with the third layer; a counter substrate over the cathode; and a resin filled between the cathode and the counter substrate. - View Dependent Claims (9, 10, 11, 14)
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Specification
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- Resources
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKumaki, Daisuke, Seo, Satoshi
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Primary Examiner(s)Dickey; Thomas L
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Application NumberUS12/273,044Publication NumberTime in Patent Office945 DaysField of Search257/103, 257/E51.051, 313/504, 313/506US Class Current257/103CPC Class CodesH10K 2102/351 ThicknessH10K 50/15 Hole transporting layersH10K 50/155 comprising dopantsH10K 50/157 between the light-emitting ...H10K 50/16 Electron transporting layersH10K 50/165 comprising dopantsH10K 59/12 Active-matrix OLED [AMOLED]...
