Multi-layer/multi-input/multi-output (MLMIMO) models and method for using
First Claim
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1. A method for establishing a Multi-Layer/Multi-Input/Multi-Output (MLMIMO) model comprising:
- determining a first multi-layer processing sequence to create one or more final poly-gate structures in one or more multi-layer gate structures, wherein the first multi-layer processing sequence includes one or more first measurement procedures, one or more Partial-Etch (PE) procedures, one or more Final-Etch (F-E) procedures, and one or more second measurement procedures, wherein a final poly-gate structure comprises at least one sidewall angle (SWA) and at least one gate-width, the SWA being between approximately eighty-five degrees and approximately ninety-two degrees, and the gate-width being between approximately twenty nanometers and approximately fifty nanometers;
selecting a first Multi-Layer/Multi-Input/Multi-Output (MLMIMO) model configured to simulate the first multi-layer processing sequence, the first MLMIMO including a plurality of Controlled Variables (CVs), a plurality of Manipulated Variables (MVs), and a plurality of Disturbance Variables (DVs);
determining a first set of DVs associated with the first MLMIMO, wherein one or more of the first measurement procedures are configured to provide one or more of the DVs, one or more of the DVs being determined by a preceding procedure or layer;
determining a first set of CVs associated with the first MLMIMO and ranges associated with the CVs, wherein the CVs include one or more critical dimensions (CDs) associated with the final poly-gate structure and one or more SWAs associated with the final poly-gate structures, wherein one or more of the second measurement procedures are configured to provide one or more of the first set of CVs;
establishing a first set of MVs associated with the first MLMIMO using one or more candidate recipes, wherein the first set of MVs includes one or more Within-Wafer Manipulated Variables (WiW-MVs) configured to change while a substrate is being processed, and one or more Wafer-to-Wafer-Manipulated Variables (W2W-MVs) configured to change after the substrate has been processed;
analyzing the MLMIMO model, wherein one or more statistical models are selected, one or more ranges are provided for the CVs and the MVs, and one or more statistical analysis procedures are performed to establish Design of Experiments (DOE) data, wherein the statistical models are configured to associate one or more MVs with one or more CVs;
establishing one or more nonlinear models having quadratic and interaction terms by using a least squares technique and statistical software;
creating one or more steady-state linear gain matrices (G) using the DOE data, wherein each gain matrix includes a first number of MVs and a second number of CVs;
calculating one or more Relative Gain Arrays (RGA) using one or more of the steady-state linear gain matrices (G), wherein RGA=G{circle around (x)}(G−
1)T and {circle around (x)} denotes element-by-element multiplication;
optimizing one or more sets of MVs using one or more pairing rules;
determining one or more stability conditions for the MLMIMO; and
optimizing the MLMIMO using performance parameters associated with a first set of processing tools configured to perform the first multi-layer processing sequence.
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Abstract
The invention provides a method of processing a substrate using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more masking layer creation procedures, one or more pre-processing measurement procedures, one or more Partial-Etch (P-E) procedures, one or more Final-Etch (F-E) procedures, and one or more post-processing measurement procedures.
32 Citations
19 Claims
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1. A method for establishing a Multi-Layer/Multi-Input/Multi-Output (MLMIMO) model comprising:
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determining a first multi-layer processing sequence to create one or more final poly-gate structures in one or more multi-layer gate structures, wherein the first multi-layer processing sequence includes one or more first measurement procedures, one or more Partial-Etch (PE) procedures, one or more Final-Etch (F-E) procedures, and one or more second measurement procedures, wherein a final poly-gate structure comprises at least one sidewall angle (SWA) and at least one gate-width, the SWA being between approximately eighty-five degrees and approximately ninety-two degrees, and the gate-width being between approximately twenty nanometers and approximately fifty nanometers; selecting a first Multi-Layer/Multi-Input/Multi-Output (MLMIMO) model configured to simulate the first multi-layer processing sequence, the first MLMIMO including a plurality of Controlled Variables (CVs), a plurality of Manipulated Variables (MVs), and a plurality of Disturbance Variables (DVs); determining a first set of DVs associated with the first MLMIMO, wherein one or more of the first measurement procedures are configured to provide one or more of the DVs, one or more of the DVs being determined by a preceding procedure or layer; determining a first set of CVs associated with the first MLMIMO and ranges associated with the CVs, wherein the CVs include one or more critical dimensions (CDs) associated with the final poly-gate structure and one or more SWAs associated with the final poly-gate structures, wherein one or more of the second measurement procedures are configured to provide one or more of the first set of CVs; establishing a first set of MVs associated with the first MLMIMO using one or more candidate recipes, wherein the first set of MVs includes one or more Within-Wafer Manipulated Variables (WiW-MVs) configured to change while a substrate is being processed, and one or more Wafer-to-Wafer-Manipulated Variables (W2W-MVs) configured to change after the substrate has been processed; analyzing the MLMIMO model, wherein one or more statistical models are selected, one or more ranges are provided for the CVs and the MVs, and one or more statistical analysis procedures are performed to establish Design of Experiments (DOE) data, wherein the statistical models are configured to associate one or more MVs with one or more CVs; establishing one or more nonlinear models having quadratic and interaction terms by using a least squares technique and statistical software; creating one or more steady-state linear gain matrices (G) using the DOE data, wherein each gain matrix includes a first number of MVs and a second number of CVs; calculating one or more Relative Gain Arrays (RGA) using one or more of the steady-state linear gain matrices (G), wherein RGA=G{circle around (x)}(G−
1)T and {circle around (x)} denotes element-by-element multiplication;optimizing one or more sets of MVs using one or more pairing rules; determining one or more stability conditions for the MLMIMO; and optimizing the MLMIMO using performance parameters associated with a first set of processing tools configured to perform the first multi-layer processing sequence. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for using a Multi-Layer/Multi-Input/Multi-Output (MLMIMO) model to create gate structures on a plurality of substrates, the method comprising:
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a) receiving a first set of substrates and associated substrate data, the substrate data including real-time and historical data; b) establishing a first number (l) of disturbance variables DV(l) using real-time integrated metrology (IM) data associated with a patterned photoresist layer on one or more incoming substrates, wherein the real-time IM data includes critical dimension (CD) data, sidewall angle (SWA) data, thickness data, photoresist data, BARC data, wafer substrate data, and diffraction signal data from multiple sites in the patterned photoresist layer on each incoming substrate, wherein I is a first integer greater than two; c) establishing a second number (m) of manipulated variables MV(m), wherein m is a second integer greater than two; d) establishing a third number (n) of control variables, wherein n is a third integer greater than two and CV(n) is defined as
CV(n)=fn{MV(1), . . . MV(m−
1),MV(m),DV(1), . . . DV(l−
1),DV(l)}+offsetsne) calculating optimized process settings using a quadratic objective function, and target deviations t(n) defined as;
t(n)={DV(n}−
target CV(n)};f) calculating a plurality of manipulated variables MV(l); g) defining an adjusted process recipe using one or more of the calculated manipulated variables MV(l) established during nonlinear programming; h) processing one or more of the first set of substrates using the adjusted process recipe; I) obtaining additional measurement data for one or more of the processed substrates, wherein new controlled variable (CV) data is obtained and filtered; j) calculating one or more process errors using differences between measured control variable data and predicted control variable data; k) calculating feedback data items, wherein errors are used to update the offsetsn using an exponentially weighted moving average (EWMA) filter; l) updating the model offsetsn in an optimizer unit; and m) repeating steps a)-l) using each substrate in the first set of substrates. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification