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Semiconductor device manufacturing method and substrate processing apparatus

  • US 7,968,437 B2
  • Filed: 11/10/2006
  • Issued: 06/28/2011
  • Est. Priority Date: 11/18/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device manufacturing method comprising:

  • loading a substrate into a processing chamber;

    forming an initial portion of a thin film with a specified thickness on the substrate by repeating a first one cycle operation multiple times, wherein the first one cycle operation includes supplying a material gas into the processing chamber, and supplying a first reaction gas not containing oxygen atoms into the processing chamber,forming a main portion of the thin film on the initial portion of the thin film formed on the substrate by repeating a second one cycle operation multiple times, wherein the second one cycle operation includes supplying the same material gas as the material gas used in the forming of the initial portion of the thin film into the processing chamber, and supplying a second reaction gas containing oxygen atoms into the processing chamber, andunloading the substrate formed with the thin film of the specified thickness from the processing chamber.

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