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High-voltage device structure

  • US 7,968,938 B2
  • Filed: 06/10/2005
  • Issued: 06/28/2011
  • Est. Priority Date: 06/14/2004
  • Status: Active Grant
First Claim
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1. A high-voltage device, comprising:

  • a substrate;

    a silicon mesa formed on the substrate, wherein the silicon mesa provides a drift region having a constant doping profile;

    a recessed gate and source formed on the silicon mesa;

    a trench adjacent each side of the silicon mesa; and

    a metal-dielectric field plate structure formed in each trench;

    wherein each metal-dielectric field plate structure comprises a dielectric and a metal field plate formed over the dielectric, and wherein a thickness of the dielectric uniformly increases linearly through a portion of a depth of the trench, wherein the dielectric is configured to produce a constant longitudinal electric field through the portion of the depth of the trench.

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