Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a semiconductor layer formed over a substrate;
a first insulating layer formed over the semiconductor layer;
a gate electrode formed over the first insulating layer;
a second insulating layer formed over the gate electrode;
an opening which reaches the semiconductor layer and is formed at least in the second insulating layer;
a step portion formed at a side surface of the second insulating layer in the opening; and
a conductive layer which is formed over the second insulating layer, covers a side surface of the opening, and is in contact with the semiconductor layer,wherein the step portion is provided below a top surface of the gate electrode.
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Abstract
A method for easily manufacturing a semiconductor device in which variation in thickness or disconnection of a source electrode or a drain electrode is prevented is proposed. A semiconductor device includes a semiconductor layer formed over an insulating substrate; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; an opening which reaches the semiconductor layer and is formed at least in the first insulating layer and the second insulating layer; and a step portion formed at a side surface of the second insulating layer in the opening.
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Citations
27 Claims
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1. A semiconductor device comprising:
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a semiconductor layer formed over a substrate; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; an opening which reaches the semiconductor layer and is formed at least in the second insulating layer; a step portion formed at a side surface of the second insulating layer in the opening; and a conductive layer which is formed over the second insulating layer, covers a side surface of the opening, and is in contact with the semiconductor layer, wherein the step portion is provided below a top surface of the gate electrode. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a semiconductor layer formed over a substrate; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; an opening which reaches the semiconductor layer and is formed at least in the first insulating layer and the second insulating layer; a step portion formed at a side surface of the second insulating layer in the opening; and a conductive layer which is formed over the second insulating layer, covers a side surface of the opening, and is in contact with the semiconductor layer, wherein the step portion is provided below a top surface of the gate electrode. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device comprising:
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a semiconductor layer formed over a substrate; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; an opening which reaches the semiconductor layer and is formed at least in the second insulating layer; a step portion formed at a side surface of the second insulating layer in the opening; and a conductive layer which is formed over the second insulating layer, covers a side surface of the opening, and is in contact with the semiconductor layer, wherein a silicide layer is formed on at least a portion exposed by the opening of the semiconductor layer, and wherein the step portion is provided below a top surface of the gate electrode. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a semiconductor layer formed over a substrate; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; an insulating sidewall formed at a side surface of the gate electrode; a second insulating layer formed over the gate electrode; an opening which reaches the semiconductor layer and is formed at least in the second insulating layer; a step portion formed at a side surface of the second insulating layer in the opening; and a conductive layer which is formed over the second insulating layer, covers a side surface of the opening, and is in contact with the semiconductor layer, wherein the step portion is provided below a top surface of the gate electrode. - View Dependent Claims (18, 19, 20, 21)
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22. A semiconductor device comprising:
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a semiconductor layer formed over a substrate; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; an insulating sidewall formed at a side surface of the gate electrode; a second insulating layer formed over the gate electrode; an opening which reaches the semiconductor layer and is formed at least in the second insulating layer; a step portion formed at a side surface of the second insulating layer in the opening; and a conductive layer which is formed over the second insulating layer, covers a side surface of the opening, and is in contact with the semiconductor layer, wherein a silicide layer is formed on at least a portion exposed by the opening of the semiconductor layer, and wherein the step portion is provided below a top surface of the gate electrode. - View Dependent Claims (23, 24, 25, 26, 27)
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Specification