Method to improve inductance with a high-permeability slotted plate core in an integrated circuit
First Claim
1. An inductor structure formed in an integrated circuit, comprising:
- a first isolation layer;
a conductive material layer located over the first isolation layer, and defining an inductor coil with laterally spaced multiple turns;
a core plate layer comprising a conductive ferromagnetic material conformally located overlying and extending between adjacent ones of the inductor coil turns; and
a second isolation layer conformally formed over the conductive material layer, between the conductive material layer and the core plate layer.
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Abstract
An inductor structure (102) formed in an integrated circuit (100) is disclosed, and includes a first isolation layer (106) and a first core plate (104) disposed over or within the first isolation layer (106, 114). The first core plate (104) includes a plurality of electrically coupled conductive traces composed of a conductive ferromagnetic material layer. A second isolation layer (108) overlies the first isolation layer and an inductor coil (102) composed of a conductive material layer (118) is formed within the second isolation layer (108). Another core plate may be formed over the coil. The one or more core plates increase an inductance (L) of the inductor coil (102).
23 Citations
12 Claims
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1. An inductor structure formed in an integrated circuit, comprising:
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a first isolation layer; a conductive material layer located over the first isolation layer, and defining an inductor coil with laterally spaced multiple turns; a core plate layer comprising a conductive ferromagnetic material conformally located overlying and extending between adjacent ones of the inductor coil turns; and a second isolation layer conformally formed over the conductive material layer, between the conductive material layer and the core plate layer. - View Dependent Claims (2, 3)
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4. A semiconductor device, comprising:
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a semiconductor substrate; a metal interconnect layer formed in the substrate; a dielectric layer formed overlying the metal interconnect layer; a conductive via formed within the dielectric layer connecting to the metal interconnect layer; at least one protective overcoat layer formed over the dielectric layer; a conductive material layer formed within openings in the at least one protective overcoat layer and defining an inductor coil having laterally spaced multiple turns with an end terminal connecting to the conductive via; an insulation layer disposed conformally overlying and extending between the inductor coil turns; and a conductive ferromagnetic material layer disposed conformally overlying and extending between the inductor turns over the insulation layer. - View Dependent Claims (5, 6, 7, 8)
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9. A method of forming an integrated inductor structure over a semiconductor substrate, comprising:
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providing a first isolation layer disposed over the semiconductor substrate; forming and patterning a conductive material layer to define an inductor coil having laterally spaced multiple turns and overlying the first isolation layer; forming a second isolation layer conformally over the inductor coil; forming a core plate comprising a conductive ferromagnetic material conformally overlying the second isolation layer, overlying and extending between adjacent ones of the inductor coil turns; and forming a third isolation layer over the core plate. - View Dependent Claims (10, 11, 12)
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Specification